Abstract:Anisotropic etching is a widely used process in semiconductor manufacturing, in particular for micro- and nano-scale texturing of silicon surfaces for black silicon production. The typical process of plasma-assisted etching uses energetic ions to remove material in the vertical direction, creating anisotropic etch profiles. Plasma-less anisotropic etching, considered here, is a less common process that does not use ions and plasma. The anisotropy is caused by the unequal etching rates of different crystal planes; the etching process thus proceeds in a preferred direction. In this paper, we have performed quantum chemistry modeling of gas-surface reactions involved in the etching of silicon surfaces by molecular fluorine. The results confirm that orientation-dependent etch rates are the reason for anisotropy. The modeling of F2 dissociative chemisorption on the F-terminated silicon surfaces show that Si-Si bond breaking is slow for Si(111) surface, while it is fast for the Si(100) and Si(110) surfaces. The Si(100) and Si(110) surfaces incorporate a larger number of fluorine atoms resulting in the Si-Si bonds having a larger amount of positive charge which lowers the reaction barrier of F2 dissociative chemisorption, yielding a higher etch rate for the Si(100) and Si(110) surfaces compared to the Si(111) surfaces. Molecular dynamics modeling of the same reactions has shown that the chosen reactive bond order (REBO) potential does not accurately reproduce the lower reaction barriers for F2 dissociative chemisorption on Si(100) and Si(100) surfaces. Thus, reparameterization is necessary to model the anisotropic etching process that occurs at lower temperatures.

The Model of Etching of (hkl) Planes in Monocrystalline Silicon

Anisotropic etching of Si

The Dissociated Amorphous Silica Surface: Model Development and Evaluation.

A new theory for the anisotropic etching of silicon and some underdeveloped chemical micromachining concepts

Convex corner undercutting of {100} silicon in anisotropic KOH etching: the new step-flow model of 3-D structuring and first simulation results

The Band Model and the Etching Mechanism of Silicon in Aqueous KOH

A Stochastic Model for Current and Voltage Oscillations of the Si Electrode

Orientation dependent etching of silicon by fluorine molecules: a quantum chemistry computational study

Selective Etching of Silicon in Aqueous KOH

Simulation of Anisotropic Etching of Silicon using a Cellular Automata Model

Anisotropic Etching of Three-Dimensional Shapes in Silicon - the Important Role of Galvanic Interaction

Simulation of anisotropic chemical etching of crystalline silicon using a cellular automata model

Level Set Approach to Anisotropic Wet Etching of Silicon

Study of high aspect ratio etching in silicon by a mixture of SF6/O2 using a 2-D model based on a Monte Carlo approach.

Orientation-dependent surface morphology of crystalline silicon during anisotropic etching using a continuous cellular automaton

Monte Carlo study of kinetic smoothing during dissolution and etching of the Kossel (100) and silicon (111) surfaces

Modified Release-Etch Modeling for Complex Sacrificial Layer Structures

Maskless Etching Of Three-Dimensional Silicon Structures In Koh

Atomistic description of Si etching with HCl

Surface termination and hydrogen bubble adhesion on Si(100) surfaces during anisotropic dissolution in aqueous KOH

Modeling of fluorine-based high-density plasma etching of anisotropic silicon trenches with oxygen sidewall passivation