Abstract:Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC (3C-SiC) layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV C12+ implantation of a p-type (100) Si wafer at a fluence of 6.5×1017 ions∕cm2 at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10–30 MeV I127 ions to a very low fluence of 1012 ions∕cm2 at temperatures from 80 to 800 °C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.

Effects of Beam Current Density on Ion Beam Synthesis OF SiC

Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source

Infrared Absorption Spectroscopy Study of Phase Formation in SiC Layers Synthesized by Carbon Implantation into Silicon with a Metal Vapor Vacuum Arc Ion Source

Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

Phase Transformation and Ion Beam Induced Crystallization in SiC Layers Formed by Mevva Implantation of Carbon into Silicon

Ion Beam Synthesis of embedded SiC

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Ion Beam Induced Crystallization Effect and Growth Kinetics of Buried SiC Layers Formed by Carbon Implantation into Silicon

Field Emission Properties of Ion Beam Synthesized SiC/Si Heterostructures by MEVVA Implantation

Field Emission Characteristics of SiC Capped Si Tip Array by Ion Beam Synthesis

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Structure Study of SiC Buried Layer by High Temperature C + Implantation

Influence of surface morphology on the field emission properties of planar SiC/Si heterostructures formed by ion beam synthesis

Structures and Field Emission Properties of Silicon Nanowire Arrays Implanted with Energetic Carbon Ion Beam.

Insights into the effects of Al-ion implantation temperature on material properties of 4H-SiC

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane

Formation of cubic silicon carbide layers on silicon under the action of continuous and pulsed carbon ion beams

Effect of Electron Beam Irradiation on Structure and Properties of SiCN Thin Films Prepared by Plasma Assisted Radio Frequency Magnetron Sputtering

Atomistic Analysis on Implantation Effects of Hydrogen Ions and Copper Ions into 4H-Sic

Growth Kinetics of Stoichiometric Sic Layers Formed by High Fluence Carbon Implantation into Silicon Using A Metal Vapor Vacuum Arc Ion Source