Abstract:Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of first-principle calculations, X-ray diffraction (XRD), and Raman spectroscopy demonstrate the amorphization of silicon substrate without any tendency to the segregation of carbon in the samples synthesized at low fluencies. The formation of a SiO2-like structure at this stage was also detected. X-ray photoelectron spectroscopy (XPS), XRD, and Raman spectroscopy demonstrate that an increase in carbon content at 10^17 cm-2 fluence leads to the growth of 6H-SiC films on the surface of the amorphous silicon substrate. Atomic force microscopy (AFM) data obtained also demonstrates the decreasing of surface roughens after the formation of SiC film. XPS and Raman spectra suggest that excessive carbon content leaves the SiC matrix via the formation of an insignificant amount of partially oxidized carbon nanostructures. Optical measurements also support the claim of high-quality 6H-SiC film formation in the samples synthesized at 10^17 cm-2 fluence and demonstrate the absence of any detectable contribution of nanostructures formed from excessive carbon on the optical properties of the material under study.

Infrared Absorption Spectroscopy Study of Phase Formation in SiC Layers Synthesized by Carbon Implantation into Silicon with a Metal Vapor Vacuum Arc Ion Source

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Ion Beam Synthesis of embedded SiC

Formation of SiC-surface layer by ion implantation

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source

Cosi2 Formation by High Current Ion Implantation with A Metal Vapor Vacuum Arc Ion Source

Formation of Ti Silicides by Metal-Vapor Vacuum Arc Ion Source Implantation

Low Temperature Synthesis of Β-Sic by a Metal Vapor Vacuum Arc Ion Source

Studies of synthesizing the SiC nanometer powders by chemical vapor reaction

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

X-ray and Fourier transformed infrared investigation of beta-SiC growth by ion implantation

Vacancy Effects on the Formation of He and Kr Cavities in 3C-Sic Irradiated and Annealed at Elevated Temperatures

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Phase formation of cubic silicon carbide from reactive silicon–carbon multilayers

Ti–Si Compounds Formation by High-Current Ion Implantation