Abstract:High dose carbon implantation into silicon to form a β-SiC buried layer has been performed by using a metal vapor vacuum arc ion source. The implantation energy and dose are 65 keV and 1×1018 ionscm−2, respectively. Post-implantation thermal annealing was carried out at 1250 °C for various time intervals in Ar ambient. The composition depth profile, chemical state of C and Si atoms, microstructure and optical properties of the samples have been studied using X-ray photoelectron spectroscopy, Fourier transform IR spectroscopy, cross-section transmission electron microscopy and spectroscopic ellipsometry. For the as-implanted sample, the carbon depth profile shows a Gaussian shape-like distribution with a maximum concentration exceeding the stoichiometric ratio. A clear redistribution of the implanted carbon from the Gaussian shape-like distribution to the two sides is observed during annealing. After annealing at 1250 °C for 10 h, a stoichiometric SiC buried layer of approximately 150 nm is formed. Results show the annealed sample is a multi-layered structure of SiO2 surface layer/Si top layer/damaged Si layer/upper interface layer/β-SiC buried layer/lower interface layer on Si substrate. The optical constants of the β-SiC buried layer formed by ion beam synthesis are determined from simulation of the measured ellipsometric spectra (2.3–5.0 eV) using an appropriate multi-layered model and the Bruggeman effective medium approximation.

Composition, structure and optical properties of SiC buried layer formed by high dose carbon implantation into Si using metal vapor vacuum arc ion source

Structure Study of SiC Buried Layer by High Temperature C + Implantation

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Ion Beam Synthesis of embedded SiC

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Formation of SiC-surface layer by ion implantation

XTEM and IR Absorption Analysis of Silicon Carbide Prepared by High Temperature Carbon Implantation in Silicon

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

Formation and Characterization of Si5C3 Type Silicon Carbide by Carbon Ion Implantation with a MEVVA Ion Source

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

FORMATION AND CHARACTERIZATION OF 3C-SIC BY CARBON-ION IMPLANTATION INTO SILICON WITH A MEVVA ION SOURCE

Surface and Interface Properties of Ion Implanted 4H-Silicon Carbide

Features of silicon carbide synthesis by cold implantation of carbon recoil atoms

Infrared Reflection Investigation of Ion‐implanted and Post‐implantation‐annealed Epitaxially Grown 6H‐sic

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Low Temperature Synthesis of Β-Sic by a Metal Vapor Vacuum Arc Ion Source

Β-Sic Buried Layer Formed by CH4+Ar Plasma Implantation