Abstract:Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of first-principle calculations, X-ray diffraction (XRD), and Raman spectroscopy demonstrate the amorphization of silicon substrate without any tendency to the segregation of carbon in the samples synthesized at low fluencies. The formation of a SiO2-like structure at this stage was also detected. X-ray photoelectron spectroscopy (XPS), XRD, and Raman spectroscopy demonstrate that an increase in carbon content at 10^17 cm-2 fluence leads to the growth of 6H-SiC films on the surface of the amorphous silicon substrate. Atomic force microscopy (AFM) data obtained also demonstrates the decreasing of surface roughens after the formation of SiC film. XPS and Raman spectra suggest that excessive carbon content leaves the SiC matrix via the formation of an insignificant amount of partially oxidized carbon nanostructures. Optical measurements also support the claim of high-quality 6H-SiC film formation in the samples synthesized at 10^17 cm-2 fluence and demonstrate the absence of any detectable contribution of nanostructures formed from excessive carbon on the optical properties of the material under study.

Formation of cubic silicon carbide layers on silicon under the action of continuous and pulsed carbon ion beams

Formation of SiC-surface layer by ion implantation

Ion Beam Synthesis of embedded SiC

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

FORMATION AND CHARACTERIZATION OF 3C-SIC BY CARBON-ION IMPLANTATION INTO SILICON WITH A MEVVA ION SOURCE

Precipitates and Voids in Cubic Silicon Carbide Implanted with 25 Mg + Ions

Hrtem Study of SiC Buried Layer Formed by C+implantation in Silicon

Simultaneous formation of SiC and Si nanostructures on silicon by local ion implantation and electron beam annealing

Synthesis of silicon carbide films by combined implantation with sputtering techniques

Structural, electronic, and optical properties of 6H-SiC layers synthesized by implantation of carbon ions into silicon

Formation and Characterization of Si5C3 Type Silicon Carbide by Carbon Ion Implantation with a MEVVA Ion Source

Low-temperature Epitaxial Growth of Β-Sic by Multiple-Energy Ion Implantation

Phase formation of cubic silicon carbide from reactive silicon–carbon multilayers

Structure Study of SiC Buried Layer by High Temperature C + Implantation

X-Ray Characterization Of Beta-Sic Growth And Structural Modification Of Si By Mev Ion Implantation

Formation of CeSi2 on the Si surface upon high current pulsed Ce-ion implantation

Features of silicon carbide synthesis by cold implantation of carbon recoil atoms

XTEM and IR Absorption Analysis of Silicon Carbide Prepared by High Temperature Carbon Implantation in Silicon

Silicon Carbide Formation by Methane Plasma Immersion Ion Implantation into Silicon

X-ray and Fourier transformed infrared investigation of beta-SiC growth by ion implantation

Formation of a CoSi2 layer by Co ion implantation using a metal vapor vacuum arc ion source