Abstract:The preparation and characteristics of silicon nanoarrays is now an attractive areas of research. At present,most research focused on the optical and electrical properties and applications,and less field emission characteristics,as a mature technology of silicon planar support, silicon field emission cathode materials are easily compatible with the microelectronic integrated circuits, and so they have a broad application prospects.We present the fabrication of large-scale two dimensional periodic silicon nanoarrays using nanosphere lithography,and the field emission characteristics have been studied. The fabrication process includes following steps: first the crystalline silicon substrate was coated with a monolayer of self polystyrene (PS) spheres of 220 nm in diameter, then the sample was etched by reactive ion etching to produce silicon nanoarrays. AFM images of the nanoarrays show that the tips stand 60～70 nm high and the area density can achieve 6×109/cm2. All field emission measurements were performed at a vacuum of 1.0×10-4 Pa or better. Expected to improve the field emission characteristics, about 60 nm thickness of a amorphous carbon film was deposited on top of the silicon nanoarrays by plasma-enhanced chemical vapour deposition. Field emission results show that compared to silicon nanoarrays, silicon nanoarrays coated with a thin a-C film effectively lower the threshold fields, approximately 8.1 V/μm, while field enhancement factor increased. When the electric field intensity reached 20 V/μm, the current density can reach about 1.4 mA/cm2. The improvement of field emission originates from the anisotropic structure of the films,when conductive sp2 clusters embedded in an insulating sp3 matrix,the electric field has been enhanced.

Field Emission Characteristics of SiC Capped Si Tip Array by Ion Beam Synthesis

Electron Field Emission from SiC∕Si Heterostructures by High Temperature Carbon Implantation into Silicon

Electron Field Emission from SiC/Si Heterostructures Formed by Carbon Implantation into Silicon and Etching of the Top Silicon Layer

Stable Field Emission from Vertically Oriented SiC Nanoarrays

Laser microstructuring of Si surfaces for low-threshold field-electron emission

Fabrication and Field Emission of High-Density Silicon Cone Arrays

Field electron emission from ultra-high density Si nanotip arrays

Effect of Ion Beam Etching on the Field Emission of Carbon Nanotube Arrays

Electron Field Emission Characteristics from Single-crystal Silicon Nanoarrays Fabricated by Direct Lithography with Nanosphere Mask

Fabrication of Silicon Carbide Nanowires/Carbon Nanotubes Heterojunction Arrays by High-Flux Si Ion Implantation

Field Emission from Amorphous Carbon Nitride Films Deposited on Silicon Tip Arrays

Field Electron Emission of Si Nanotips with Apexes of Various Compositions

Multi-tip Cones Induced by Ion-Bombardment

Field electron emission from gated Si tip arrays with DLC apexes

Formation of SiC-surface nanocrystals by ion implantation and electron beam rapid thermal annealing

Fabrication and field emission property of a Si nanotip array

Ion Beam Synthesis of embedded SiC

Well-aligned SiC nanoneedle arrays for excellent field emitters

Synthesis and Field Emission Property of SiCN Cone Arrays

Enhancing Electron Emission From Silicon Tip Arrays By Using Thin Amorphous Diamond Coating

Si-Tips with Saturated High Concentration Arsenic Dopant at the Nano-Apexes for Uniform Field Electron Emission