The P-Type Mg2LixSi0.4Sn0.6 Thermoelectric Materials Synthesized by a B2O3 Encapsulation Method Using Li2CO3 As the Doping Agent

Peng Gao,Joshua D. Davis,Viktor V. Poltavets,Timothy P. Hogan

DOI: https://doi.org/10.1039/c5tc03692e

IF: 6.4

2015-01-01

Journal of Materials Chemistry C

Abstract:The p-type Mg2LixSi0.4Sn0.6 were synthesized by a B2O3-encapsulation method using Li2CO3 as doping agent and showed significant improvement in ZT.

What problem does this paper attempt to address?

Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation

Binhao Wang,Haidong Zhao,Jianghua Li,Bin Zhang,Dan Wang,Chen Chen,Aihua Song,Wentao Hu,Dongli Yu,Bo Xu,Yongjun Tian

DOI: https://doi.org/10.1016/j.jmat.2023.06.001

IF: 8.589

2023-06-01

Journal of Materiomics

Abstract:With the advantages of eco-friendliness, low cost, and low density, Mg2(Si,Sn) solid solutions are promising candidates for thermoelectric applications. In this work, Sb-doped Mg2Si0.4Sn0.6 bulks were prepared with a combined method of solid-state reaction and high pressure synthesis, followed by spark plasma sintering. Our investigations show that Sb doping optimizes the carrier concentration, while Si/Sn alloying effectively suppresses the lattice thermal conductivity and induces a convergence of the two lowest-lying conduction bands. Additionally, numerous coherent Sn-rich nanoprecipitates are formed within micron-sized grains. All these factors contribute synergistically to improving the thermoelectric properties of Mg2Si0.4Sn0.6. The optimal Mg2(Si0.4Sn0.6)0.985Sb0.015 exhibits a power factor higher than 4000 μW·m−1·K−2 and a lattice thermal conductivity less than 0.8 W·m−1·K−1 at temperatures higher than 600 K, leading to the highest ZT of 1.61 at 823 K. Current work demonstrates an effective approach to enhancing the thermoelectric performance of n-type Mg2X solid solutions through doping, alloying, and microstructure modification.

materials science, multidisciplinary,chemistry, physical,physics, applied
Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Zhe Xu,Xiao-Lei Shi,Yibo Zhang,Jisheng Liang,Meng Li,Chengyan Liu,Lei Miao,Siqi Liu,Shihao Wang,Qi Zhou,Jie Gao,Zhongwei Zhang,Wei-Di Liu,Ying Peng,Jun-Liang Chen,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.cej.2024.155147

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Owing to the non-toxicity and low cost, Mg3Sb2-based Zintls are promising candidates for mid-temperature thermoelectric applications. However, the thermoelectric performance of p-type Mg3Sb2 is significantly lower than that of n-type ones. Here, we achieve simultaneous optimization of the band structure and enhanced phonon scattering through the combined doping of Na at the cation site and Bi at the anion site, leading to a competitive figure of merit, ZT of 0.73 at 773 K and a maximum theoretical energy conversion efficiency of 6.5 % at a temperature difference of 450 K. First-principles calculations indicate that Na and Bi co-doping effectively narrows the band gap and shifts the Fermi level into the valence band, thereby increasing the hole carrier concentration. This ensures a relatively high Seebeck coefficient and improved electrical conductivity, resulting in an excellent power factor of 7.5 mu W cm(-1) K-2. Additionally, by adjusting the amount of Bi nanoprecipitates in the matrix, the heterogeneous interfaces significantly enhance phonon scattering and markedly reduce the lattice thermal conductivity (0.52 W m(-1) K-1), collectively leading to the high thermoelectric performance. Furthermore, by pairing n-type Mg3.18Y0.02Sb1.5Bi0.49Se0.01, a double-leg thermoelectric device achieves an energy conversion efficiency of 4.1 % with a temperature difference of 390 K.
Enhanced thermoelectric properties of Mg2Si0.3Sn0.7 via Bi-doping under high pressure

Haidong Zhao,Dan Wang,Binhao Wang,Aihua Song,Chen Chen,Wentao Hu,Dongli Yu,Bo Xu,Yongjun Tian

DOI: https://doi.org/10.1016/j.jallcom.2024.174215

IF: 6.2

2024-06-01

Journal of Alloys and Compounds

Abstract:A series of n-type Mg2(Si0.3Sn0.7)1-x Bi x compounds with 0≤x≤0.02 were successfully synthesized through a combined approach involving solid-state reaction, high-pressure synthesis, and spark plasma sintering techniques. The method yielded homogeneously distributed single-phase materials at the micron scale, although minor compositional variations were detected within nanoscale precipitates embedded in the grains. The sample with Bi content of 0.01 exhibited enhanced thermoelectric properties, reaching a peak thermoelectric figure of merit (ZT) of 1.45 at 700 K while maintaining an average ZT of about 1.1 over the temperature range of 300−773 K. The enhancement in thermoelectric performance is ascribed to the optimized carrier concentration, band convergence, and refined microstructure. The findings suggest a simplified approach to doping that could be beneficial in creating high-performance thermoelectric materials for energy conversion.

materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
In Situ Synthesis and Thermoelectric Properties of La-Doped Mg-2(Si, Sn) Composites

Q. Zhang,J. He,X. B. Zhao,S. N. Zhang,T. J. Zhu,H. Yin,T. M. Tritt

DOI: https://doi.org/10.1088/0022-3727/41/18/185103

2008-01-01

Abstract:Utilizing the peritectic reaction and the miscibility gap featured in the pseudo-binary phase diagram of Mg2Si and Mg2Sn, we fabricated environmentally friendly Mg-2(Si, Sn) thermoelectric (TE) composites in which the Mg2Si-rich bulk grains were in situ coated by Mg2Sn-rich thin layers. The Mg2Sn-rich grain boundary phase was selectively doped with La. It was found that the La doping dramatically increased the electrical conductivity to thermal conductivity ratio in the composites. As a result, a dimensionless figure of merit ZT similar to 0.81 has been attained at 810 K for the Mg2-xLax(Si, Sn) in situ composite with x = 0.005, significantly higher than the ZT similar to 0.18 at 540 K for the undoped composite and comparable to ZT similar to 0.8 of state-of-the-art PbTe intermediate temperature TE alloys.
Improving p-type thermoelectric performance of Mg2(Ge,Sn) compounds via solid solution and Ag doping

Guangyu Jiang,Luxin Chen,Jian He,Hongli Gao,Zhengliang Du,Xinbing Zhao,Terry M. Tritt,Tiejun Zhu

DOI: https://doi.org/10.1016/j.intermet.2012.08.002

IF: 4.075

2013-01-01

Intermetallics

Abstract:Mg2X (X = Si, Ge, and Sn) compounds have attracted increasing attention owing to their promising thermoelectric properties and “green” constituent elements. While most studies to date have been on n-type Mg2(Si,Sn) solid solutions, we herein report Ag-doping study in Mg2(Ge,Sn) solid solutions to pursue higher p-type performance. Two series of samples, Mg2Ge1−xSnx and Mg2−yAgyGe0.4Sn0.6, were prepared by melting in evacuated Ta tubes, followed by hot pressing, and the thermoelectric properties of the solid solutions were investigated from room temperature to 723 K. An n- to p-type crossover in the Seebeck coefficient was observed for Mg2Ge0.4Sn0.6 and Mg2Ge0.2Sn0.8 at elevated temperatures. To enhance p-type performance, we doped Ag in Mg2Ge0.4Sn0.6 that exhibited lowest thermal conductivity among the Mg2(Ge,Sn) solid solutions. It was found that (1) p-type behavior has been established in Mg2−yAgyGe0.4Sn0.6 (y = 0.005, 0.01, 0.02, 0.04) samples in the entire temperature range studied; and (2) the electrical conductivity increased with increasing Ag content until reaching the solution limit ∼0.02. As a result, a dimensionless figure of merit ZT ∼0.38 is attained for Mg1.98Ge0.4Sn0.6Ag0.02 at 675 K, which is one of the highest reported values in p-type Mg2X compounds.
Enhanced thermoelectric properties of Mg2Si 0.58Sn0.42 compounds by Bi doping

Zhengliang Du,Tiejun Zhu,Xinbing Zhao

DOI: https://doi.org/10.1016/j.matlet.2011.08.031

IF: 3

2012-01-01

Materials Letters

Abstract:N-type Mg2Si0.58Sn0.42−xBix (0≤x≤0.015) compounds were prepared by melting the element metals in sealed tantalum tubes followed by hot pressing. The XRD results indicate that all samples are composites containing both major magnesium silicide solution phase and minor magnesium stannide solution phase. The Hall measurements show that the carrier concentrations and electrical conductivities increase with the increase of Bi doping amount. It was found that the intrinsic excitation shifts to high temperature due to Bi doping, which leads to the increase of the peak-temperatures of the Seebeck coefficient. The maximum dimensionless figure of merit is 0.65 at 700K for the sample x=0.015.
Significantly Enhanced Thermoelectric Performance of p -Type Mg 3 Sb 2 via Zn Substitution on Mg(2) Site: Optimization of Hole Concentration Through Ag Doping

Veera Prabu Kannan,Vinothkumar Lourdhusamy,Immanuel Paulraj,Sridharan Madanagurusamy,Chia-Jyi Liu

DOI: https://doi.org/10.1021/acsami.4c12868

IF: 9.5

2024-10-16

ACS Applied Materials & Interfaces

Abstract:n-Type Mg(3)Sb(2)-based thermoelectric materials have recently garnered significant interest due to their superior thermoelectric efficiency. Yet, the advancement of p-type Mg(3)Sb(2) for thermoelectric applications is impeded by its lower dimensionless figure of merit (zT). In this study, we demonstrate the improved thermoelectric performance of p-type Mg(3)Sb(2) through the strategic optimization of Zn content and Ag doping on the Mg/Zn(2) site. Initially, samples of Mg(3-x)Zn(x)Sb(2) (x = 0,...

materials science, multidisciplinary,nanoscience & nanotechnology
Effect of Sb Doping on the Thermoelectric Properties of Mg 2 Si 0.7 Sn 0.3 Solid Solutions

H. L. Gao,X. X. Liu,T. J. Zhu,S. H. Yang,X. B. Zhao

DOI: https://doi.org/10.1007/s11664-011-1584-2

IF: 2.1

2011-01-01

Journal of Electronic Materials

Abstract:This study focuses on Sb-doped Mg 2 (Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit ( ZT ) of ~0.55 at 620 K, while leaving the band gap of Mg 2 Si 0.7 Sn 0.3 almost unchanged.
Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Lihong. Huang,Tong Liu,Xiaobo Mo,Guocai Yuan,Runyu Wang,Hang Liu,Xiaobo Lei,Qinyong Zhang,Zhifeng Ren,Lihong Huang

DOI: https://doi.org/10.1016/j.mtphys.2021.100564

IF: 11.021

2021-11-01

Materials Today Physics

Abstract:Mg3Sb2-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements. However, pure and intrinsic p-type Mg3Sb2 manifests a poor thermoelectric performance because of its high electrical resistivity. It is reported that Ag doping in Mg sites can increase the mobility and carrier concentration of p-type Mg3Sb2; however, high thermal conductivity still limits the improvement of the ZT value. In the present work, Zn and Ag co-doping in Mg sites was carried out to optimize the thermoelectric performance of p-type Mg3Sb2. Experimental results revealed that the carrier concentration and mobility of Mg3Ag0.01Sb2 significantly increased after Zn doping, leading to an improvement of the power factor. Simultaneously, lattice thermal conductivity was significantly reduced due to the large mass difference between Zn and Mg. The Mg2.39Zn0.6Ag0.01Sb2 sample with an optimal doping concentration of 3.95 × 1019 cm−3 achieved a maximum ZT value of 0.84 at 773 K. Hence, Zn and Ag co-doping is an effective method to improve the thermoelectric performance of p-type Mg3Sb2.

materials science, multidisciplinary,physics, applied
Effect of Sb Doping on the Thermoelectric Properties of Mg2Si0.7Sn0.3 Solid Solutions

H. L. Gao,X. X. Liu,T. J. Zhu,S. H. Yang,X. B. Zhao

DOI: https://doi.org/10.1007/s11664-011-1584-2

IF: 2.1

2011-01-01

Journal of Electronic Materials

Abstract:This study focuses on Sb-doped Mg-2(Si,Sn) thermoelectric material. Samples were successfully fabricated using a hybrid synthesis method consisting of three different processes: induction melting, solid-state reaction, and a hot-press sintering technique. We found that the carrier concentration increased with Sb content, while the Seebeck coefficient exhibited a decreasing trend. Sb doping was shown to improve the power factor and thermoelectric figure of merit compared with the undoped material, yielding a peak figure of merit (ZT) of similar to 0.55 at 620 K, while leaving the band gap of Mg2Si0.7Sn0.3 almost unchanged.
Flux Synthesis and Thermoelectric Properties of Eco-Friendly Sb Doped Mg2Si0.5Sn0.5 Solid Solutions for Energy Harvesting

Hongli Gao,Tiejun Zhu,Xinxin Liu,Luxin Chen,Xinbing Zhao

DOI: https://doi.org/10.1039/c1jm00025j

2011-01-01

Journal of Materials Chemistry

Abstract:Mg2Si0.5-xSn0.5Sbx(x = 0-0.023) thermoelectric solid solutions have been successfully synthesized by a facile and cost-effective B2O3 flux method in air. X-ray diffraction analysis and scanning electron microscopy observations confirm that the single-phased Mg2Si0.5-xSn0.5Sbx compounds have been obtained. The peak power factor of the samples reached 3.2 x 10(-3) Wm(-1) K-2 at 610 K for x = 0.017. The maximum ZT values of > 0.9 were reproducibly obtained at 780 K for x = 0.013, which are quite comparable with those of the state-of-the-art PbTe based thermoelectric alloys operated in the intermediate temperature range. The B2O3 flux method was also demonstrated to be effective for the batch production of Mg-2(Si, Sn) solid solutions.
Thermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn

Jun Mao,Yumei Wang,Binghui Ge,Qing Jie,Zihang Liu,Udara Saparamadu,Weishu Liu,Zhifeng Ren

DOI: https://doi.org/10.1039/c6cp03944h

2016-07-27

Abstract:In this study, the thermoelectric properties of Mg2Sn0.98-xPbxSb0.02 were first studied, and then Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 were accordingly investigated. The results showed that the formation of Mg2Sn0.98-xPbxSb0.02 solid solutions effectively reduced the lattice thermal conductivity of Mg2Sn. The room temperature lattice thermal conductivity of Mg2Sn0.98Sb0.02 is ∼5.2 W m(-1) K(-1) but only ∼2.5 W m(-1) K(-1) for Mg2Sn0.73Pb0.25Sb0.02, a reduction of ∼52%. Further alloying Mg2Sn0.98-xPbxSb0.02 with Mg2Si or Mg2Ge to form Mg2Sn0.93-xSixPb0.05Sb0.02 or Mg2Sn0.93-xGexPb0.05Sb0.02 reduced the lattice thermal conductivity significantly due to enhanced phonon scattering by point defects as well as nanoparticles. Moreover, bipolar thermal conductivities were suppressed due to the larger bandgap of Mg2Si and Mg2Ge than Mg2Sn. Furthermore, similar to the pseudo-binary Mg2Sn-Mg2Si and Mg2Sn-Mg2Ge systems, band convergence was also observed in pseudo-ternary Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 materials. The convergence of conduction bands led to higher PFs at lower temperatures for Mg2Sn0.93-xSixPb0.05Sb0.02 and Mg2Sn0.93-xGexPb0.05Sb0.02 materials. As a result, higher peak ZTs of ∼1.3 for Mg2Sn0.63Si0.3Pb0.05Sb0.02 and ∼1.2 for Mg2Sn0.68Ge0.25Pb0.05Sb0.02 were achieved.
Realizing Cd and Ag codoping in p-type Mg3Sb2 toward high thermoelectric performance

Shijuan Xiao,Kunling Peng,Zizhen Zhou,Huan Wang,Sikang Zheng,Xu Lu,Guang Han,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.jma.2021.09.012

IF: 11.813

2021-10-01

Journal of Magnesium and Alloys

Abstract:Mg3Sb2 has attracted intensive attention as a typical Zintl-type thermoelectric material. Despite the exceptional thermoelectric performance in n-type Mg3Sb2, the dimensionless figure of merit (zT) of p-type Mg3Sb2 remains lower than 1, which is mainly attributed to its inferior electrical properties. Herein, we synergistically optimize the thermoelectric properties of p-type Mg3Sb2 materials via codoping of Cd and Ag, which were synthesized by high-energy ball milling combined with hot pressing. It is found that Cd doping not only increases the carrier mobility of p-type Mg3Sb2, but also diminishes its thermal conductivity (κ tot), with Mg2.85Cd0.5Sb2 achieving a low κ tot value of ∼0.67 W m−1 K−1 at room temperature. Further Ag doping elevates the carrier concentration, so that the power factor is optimized over the entire temperature range. Eventually, a peak zT of ∼0.75 at 773 K and an excellent average zT of ∼0.41 over 300 − 773 K are obtained in Mg2.82Ag0.03Cd0.5Sb2, which are ∼240% and ∼490% higher than those of pristine Mg3.4Sb2, respectively. This study provides an effective pathway to synergistically improve the thermoelectric performance of p-type Mg3Sb2 by codoping Cd and Ag, which is beneficial to the future applications of Mg3Sb2-based thermoelectric materials.

metallurgy & metallurgical engineering
Enhanced Thermoelectric Performance of p-Type Mg3- xZnxSb2/Sb Composites: The Role of ZnSb/Sb Composites

Veera Prabu Kannan,Vinothkumar Lourdhusamy,Immanuel Paulraj,Chia-Jyi Liu,Sridharan Madanagurusamy

DOI: https://doi.org/10.1021/acsami.3c10418

2023-10-11

Abstract:Mg3Sb2-based Zintl compounds have garnered recent attention as promising materials for thermoelectric applications due to their low thermal conductivity and high zT values as n-type materials. However, the zT values of p-type materials are lower compared to their n-type counterparts. Through a straightforward process involving cold pressing and evacuating-and-encapsulating sintering, we have successfully synthesized a variety of p-type Mg3-xZnxSb2/Sb composites by adding the ZnSb-4%Sb composite into the Mg3Sb2 host material. Structural analyses have provided insights into the role of the ZnSb-4%Sb composite, demonstrating its significance in Zn doping on the Mg sites and Sb acting as an additive in the composite. The introduction of Zn on the Mg tetrahedral sites enhances the concentration of carriers, while the presence of highly conductive Sb grains facilitates the movement of charge carriers between adjacent Mg3-xZnxSb2 grains, thereby promoting mobility. Consequently, the electrical resistivity of the Mg3-xZnxSb2/Sb composites decreases as the Zn content increases. At 710 K, the Mg1.91Zn1.09Sb2/Sb composite exhibits the lowest resistivity, measuring 5.1 mΩ-cm, which is 46 times lower than that of the Mg3Sb2 host. Furthermore, the zT value of the Mg3-xZnxSb2/Sb composites increases with higher Zn content (x), benefiting from a combination of an improved power factor and reduced thermal conductivity. Significantly, our straightforward fabrication process enables us to achieve a maximum zT value of 0.58 at 710 K for the Mg1.91Zn1.09Sb2/Sb composite. This achievement can primarily be attributed to the 8-fold enhancement in power factor compared to the Mg3Sb2 host.
Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Jinsuo Hu,Jianbo Zhu,Fengkai Guo,Haixu Qin,Yijie Liu,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.34133/2022/9842949

IF: 11

2022-04-29

Research

Abstract:Environmentally friendly Mg 3 Sb 2 -based materials have drawn intensive attention owing to their promising thermoelectric performance. In this work, the electrical properties of p-type Mg 3 Sb 2 are dramatically optimized by the regulation of Mg deficiency. Then, we, for the first time, found that Zn substitution at the Mg2 site leads to the alignment of p x , y and p z orbital, resulting in a high band degeneracy and the dramatically enhanced Seebeck coefficient, demonstrated by the DFT calculations and electronic properties measurement. Moreover, Zn alloying decreases Mg1 (Zn) vacancies formation energy and in turn increases Mg (Zn) vacancies and optimizes the carrier concentration. Simultaneously, the Mg/Zn substitutions, Mg vacancies, and porosity structure suppress the phonon transport in a broader frequency range, leading to a low lattice thermal conductivity of ~0.47 W m -1 K -1 at 773 K. Finally, a high ZT of ~0.87 at 773 K was obtained for Mg 1.95 Na 0.01 Zn 1 Sb 2 , exceeding most of the previously reported p-type Mg 3 Sb 2 compounds. Our results further demonstrate the promising prospects of p-type Mg 3 Sb 2 -based material in the field of mid-temperature heat recovery.

multidisciplinary sciences
High Figures Of Merit And Natural Nanostructures In Mg2si0.4sn0.6 Based Thermoelectric Materials

Q. Zhang,Jian He,Tiejun Zhu,ShengNan Zhang,Xinbing Zhao,Terry M. Tritt

DOI: https://doi.org/10.1063/1.2981516

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Mg-2(Si, Sn) compounds have shown great promise for thermoelectric applications due to good thermoelectric properties, nontoxicity, and abundantly available constituent elements. Herein we report on the thermoelectric properties and microstructure of high performance Mg2Si0.4-xSn0.6Sbx (0 <= x <= 0.015) alloys. The state-of-the-art ZT value of similar to 1.1 has been attained in the samples with x=0.0075 due to the relatively low thermal conductivity. In light of the simple cubic structure and mostly light constituent elements, the reduction in lattice thermal conductivity has been discussed in connection with a fairly large amount of in situ formed nanostructures in these samples. (C) 2008 American Institute of Physics.
Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Juan Li,Kejia Liu,Xiaojing Ma,Zhongran Yang,Liqun Yi,Jun Mao,Qian Zhang

DOI: https://doi.org/10.1021/acs.inorgchem.4c00522

IF: 4.6

2024-05-02

Inorganic Chemistry

Abstract:A P-type Mg(3)Sb(2)-based Zintl phase compound has been considered a promising candidate for thermoelectric applications. Alloying, which introduces a high concentration of point defects, is particularly effective in scattering phonons and reducing lattice thermal conductivity. Herein, alloying in p-type Mg(2.995)Na(0.005)Sb(2) via the introduction of elements like Yb, Eu, Ca, and Ba was realized, and the room-temperature lattice thermal conductivity has been effectively reduced to ∼1.1 W m^(-1)...

chemistry, inorganic & nuclear
Thermoelectric Properties of Sb-doped Mg2 Si0.59 Sn0.41 Solid Solutions

Zhengliang Du,Jiaolin Cui,Tiejun Zhu,Xinbing Zhao

DOI: https://doi.org/10.1002/pssa.201329185

2013-01-01

Abstract:N‐type Mg2Si0.59 − xSn0.41Sbx (0 ≤ x ≤ 0.01) solid solutions were prepared by melting elemental metals in sealed tantalum tubes followed by hot pressing. The electrical conductivity, Seebeck coefficient, and thermal conductivity have been measured as a function of temperature from 300 to 770 K. The electron effective mass and electron concentration increase with increasing Sb doping amount. The Sb doping enhances the concentration of Mg vacancies, which reduces the electron concentration. The maximum dimensionless figure of merit is 0.68 at 693 K for the x = 0.005 sample.
Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Jiankang Li,Raju Chetty,Zihang Liu,Weihong Gao,Takao Mori

DOI: https://doi.org/10.1002/smll.202408059

IF: 13.3

2024-11-18

Small

Abstract:N‐type Mg3Sb2‐based material is recognized as a promising thermoelectric material. Ag is revealed as an effective dopant for the Mg3.2Sb1.5Bi0.49Te0.01 system with a different effect from Cu. A peak ZT of 1.64 at 673 K is achieved. Moreover, a 2‐pair module fabricated with MgAgSb as p‐type material, results in a high ηmax of ≈7.9% at relatively low ΔT of 277 K. The n‐type Mg3(Sb, Bi)2 compounds show great potential for wasted heat energy harvesting due to their promising thermoelectric properties. This work discovers that doping transition element Ag into the n‐type Mg3(Sb, Bi)2 can effectively optimize the power factor and suppress the lattice thermal conductivity simultaneously. Interestingly, the Ag doping has different effects compared to the isoelectronic and same group element Cu addition studied previously. A high power factor of 19.6 μW cm−1 K−2 is obtained at 673 K owing to the increased electrical conductivity. At the same time, the lattice thermal conductivity is reduced to ≈0.5 W m−1 K−1 because of enhanced phonon scattering induced by Ag atoms. These improvements lead to a peak figure of merit (ZT) of 1.64 at 673 K as well as a high average ZT of 1.27 is obtained from 323 K to 673 K. Furthermore, a thermoelectric single leg with a competitive conversion efficiency of ≈11% under a hot‐side temperature of 673 K is fabricated successfully. In addition, a 2‐pair module composed of n‐type Mg3(Sb, Bi)2 alloy and p‐type MgAgSb‐based compound demonstrates the high conversion efficiency of ≈7.9% at a temperature difference of 277 K, which will significantly upgrade the sustainable energy recycling technology.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Approaching the Minimum Lattice Thermal Conductivity of P-Type SnTe Thermoelectric Materials by Sb and Mg Alloying.

Tiezheng Fu,Jiazhan Xin,Tiejun Zhu,Jiajun Shen,Teng Fang,Xinbing Zhao

DOI: https://doi.org/10.1016/j.scib.2019.06.007

IF: 18.9

2019-01-01

Science Bulletin

Abstract:SnTe, as the nontoxic analogue to high-performance PbTe thermoelectric material, has captured the worldwide interest recently. Many triumphant instances focus on the strategies of band convergence, resonant doping, and nano-precipitates phonon scattering. Herein, the p-type SnTe-based materials Sn-0.85 xSb0.15MgxTe (x = 0-0.10) are fabricated and a combined effect of Sb and Mg is investigated. Sb alloying tunes the hole carrier concentration of SnTe and decreases the lattice thermal conductivity. Mg alloying leads to a nearly hundredfold rise of disorder parameter due to the large mass and strain fluctuations, and as a consequence the lattice thermal conductivity decreases further down to similar to 0.64 W m(-1) K-1 at 773 K, close to the theoretical minimum of the lattice thermal conductivity (similar to 0.50 W m(-1) K-1) of SnTe. In conjunction with the enhancement of the Seebeck coefficient caused by band convergence due to Mg alloying, the maximum zT(max) reaches similar to 1.02 and the device zT(device) of similar to 0.50 at 773 K for Sn0.79Sb0.15Mg0.06Te, suggesting this SnTe-based composition has a promising potential in intermediate temperature thermoelectric applications. (C) 2019 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.

The P-Type Mg2LixSi0.4Sn0.6 Thermoelectric Materials Synthesized by a B2O3 Encapsulation Method Using Li2CO3 As the Doping Agent

Enhanced thermoelectric performance of Sb-doped Mg2Si0.4Sn0.6 via doping, alloying and nanoprecipitation

Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Enhanced thermoelectric properties of Mg2Si0.3Sn0.7 via Bi-doping under high pressure

In Situ Synthesis and Thermoelectric Properties of La-Doped Mg-2(Si, Sn) Composites

Improving p-type thermoelectric performance of Mg2(Ge,Sn) compounds via solid solution and Ag doping

Enhanced thermoelectric properties of Mg2Si 0.58Sn0.42 compounds by Bi doping

Significantly Enhanced Thermoelectric Performance of p -Type Mg 3 Sb 2 via Zn Substitution on Mg(2) Site: Optimization of Hole Concentration Through Ag Doping

Effect of Sb Doping on the Thermoelectric Properties of Mg 2 Si 0.7 Sn 0.3 Solid Solutions

Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Effect of Sb Doping on the Thermoelectric Properties of Mg<sub>2</sub>Si<sub>0.7</sub>Sn<sub>0.3</sub> Solid Solutions

Flux Synthesis and Thermoelectric Properties of Eco-Friendly Sb Doped Mg2Si0.5Sn0.5 Solid Solutions for Energy Harvesting

Thermoelectric performance enhancement of Mg2Sn based solid solutions by band convergence and phonon scattering via Pb and Si/Ge substitution for Sn

Realizing Cd and Ag codoping in p-type Mg3Sb2 toward high thermoelectric performance

Enhanced Thermoelectric Performance of p-Type Mg3- xZnxSb2/Sb Composites: The Role of ZnSb/Sb Composites

Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

High Figures Of Merit And Natural Nanostructures In Mg2si0.4sn0.6 Based Thermoelectric Materials

Improvement of the Thermoelectric Properties of p-Type Mg 3 Sb 2 by Mg-Site Double Substitution

Thermoelectric Properties of Sb-doped Mg2 Si0.59 Sn0.41 Solid Solutions

Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Approaching the Minimum Lattice Thermal Conductivity of P-Type SnTe Thermoelectric Materials by Sb and Mg Alloying.