Characterization of a penta-and an octasaccharide from urine of a patient with juvenile GM1-gangliosidosis.

A. Lunblad,S. Sjöblad,S. Svensson

DOI: https://doi.org/10.1016/0003-9861(78)90365-X

IF: 4.114

1978-05-01

Archives of Biochemistry and Biophysics

Abstract:

What problem does this paper attempt to address?

Significantly Enhanced Thermoelectric Performance of p -Type Mg 3 Sb 2 via Zn Substitution on Mg(2) Site: Optimization of Hole Concentration Through Ag Doping

Veera Prabu Kannan,Vinothkumar Lourdhusamy,Immanuel Paulraj,Sridharan Madanagurusamy,Chia-Jyi Liu

DOI: https://doi.org/10.1021/acsami.4c12868

IF: 9.5

2024-10-16

ACS Applied Materials & Interfaces

Abstract:n-Type Mg(3)Sb(2)-based thermoelectric materials have recently garnered significant interest due to their superior thermoelectric efficiency. Yet, the advancement of p-type Mg(3)Sb(2) for thermoelectric applications is impeded by its lower dimensionless figure of merit (zT). In this study, we demonstrate the improved thermoelectric performance of p-type Mg(3)Sb(2) through the strategic optimization of Zn content and Ag doping on the Mg/Zn(2) site. Initially, samples of Mg(3-x)Zn(x)Sb(2) (x = 0,...

materials science, multidisciplinary,nanoscience & nanotechnology
Na/Bi-co-doping and Heterogeneous Interfaces Leading to Enhanced Thermoelectric Performance of P-Type Mg3Sb2-based Zintls

Zhe Xu,Xiao-Lei Shi,Yibo Zhang,Jisheng Liang,Meng Li,Chengyan Liu,Lei Miao,Siqi Liu,Shihao Wang,Qi Zhou,Jie Gao,Zhongwei Zhang,Wei-Di Liu,Ying Peng,Jun-Liang Chen,Zhi-Gang Chen

DOI: https://doi.org/10.1016/j.cej.2024.155147

IF: 15.1

2024-01-01

Chemical Engineering Journal

Abstract:Owing to the non-toxicity and low cost, Mg3Sb2-based Zintls are promising candidates for mid-temperature thermoelectric applications. However, the thermoelectric performance of p-type Mg3Sb2 is significantly lower than that of n-type ones. Here, we achieve simultaneous optimization of the band structure and enhanced phonon scattering through the combined doping of Na at the cation site and Bi at the anion site, leading to a competitive figure of merit, ZT of 0.73 at 773 K and a maximum theoretical energy conversion efficiency of 6.5 % at a temperature difference of 450 K. First-principles calculations indicate that Na and Bi co-doping effectively narrows the band gap and shifts the Fermi level into the valence band, thereby increasing the hole carrier concentration. This ensures a relatively high Seebeck coefficient and improved electrical conductivity, resulting in an excellent power factor of 7.5 mu W cm(-1) K-2. Additionally, by adjusting the amount of Bi nanoprecipitates in the matrix, the heterogeneous interfaces significantly enhance phonon scattering and markedly reduce the lattice thermal conductivity (0.52 W m(-1) K-1), collectively leading to the high thermoelectric performance. Furthermore, by pairing n-type Mg3.18Y0.02Sb1.5Bi0.49Se0.01, a double-leg thermoelectric device achieves an energy conversion efficiency of 4.1 % with a temperature difference of 390 K.
Realizing Cd and Ag codoping in p-type Mg3Sb2 toward high thermoelectric performance

Shijuan Xiao,Kunling Peng,Zizhen Zhou,Huan Wang,Sikang Zheng,Xu Lu,Guang Han,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.jma.2021.09.012

IF: 11.813

2021-10-01

Journal of Magnesium and Alloys

Abstract:Mg3Sb2 has attracted intensive attention as a typical Zintl-type thermoelectric material. Despite the exceptional thermoelectric performance in n-type Mg3Sb2, the dimensionless figure of merit (zT) of p-type Mg3Sb2 remains lower than 1, which is mainly attributed to its inferior electrical properties. Herein, we synergistically optimize the thermoelectric properties of p-type Mg3Sb2 materials via codoping of Cd and Ag, which were synthesized by high-energy ball milling combined with hot pressing. It is found that Cd doping not only increases the carrier mobility of p-type Mg3Sb2, but also diminishes its thermal conductivity (κ tot), with Mg2.85Cd0.5Sb2 achieving a low κ tot value of ∼0.67 W m−1 K−1 at room temperature. Further Ag doping elevates the carrier concentration, so that the power factor is optimized over the entire temperature range. Eventually, a peak zT of ∼0.75 at 773 K and an excellent average zT of ∼0.41 over 300 − 773 K are obtained in Mg2.82Ag0.03Cd0.5Sb2, which are ∼240% and ∼490% higher than those of pristine Mg3.4Sb2, respectively. This study provides an effective pathway to synergistically improve the thermoelectric performance of p-type Mg3Sb2 by codoping Cd and Ag, which is beneficial to the future applications of Mg3Sb2-based thermoelectric materials.

metallurgy & metallurgical engineering
Electronic Orbital Alignment and Hierarchical Phonon Scattering Enabling High Thermoelectric Performance p-Type Mg 3 Sb 2 Zintl Compounds

Jinsuo Hu,Jianbo Zhu,Fengkai Guo,Haixu Qin,Yijie Liu,Qian Zhang,Zihang Liu,Wei Cai,Jiehe Sui

DOI: https://doi.org/10.34133/2022/9842949

IF: 11

2022-04-29

Research

Abstract:Environmentally friendly Mg 3 Sb 2 -based materials have drawn intensive attention owing to their promising thermoelectric performance. In this work, the electrical properties of p-type Mg 3 Sb 2 are dramatically optimized by the regulation of Mg deficiency. Then, we, for the first time, found that Zn substitution at the Mg2 site leads to the alignment of p x , y and p z orbital, resulting in a high band degeneracy and the dramatically enhanced Seebeck coefficient, demonstrated by the DFT calculations and electronic properties measurement. Moreover, Zn alloying decreases Mg1 (Zn) vacancies formation energy and in turn increases Mg (Zn) vacancies and optimizes the carrier concentration. Simultaneously, the Mg/Zn substitutions, Mg vacancies, and porosity structure suppress the phonon transport in a broader frequency range, leading to a low lattice thermal conductivity of ~0.47 W m -1 K -1 at 773 K. Finally, a high ZT of ~0.87 at 773 K was obtained for Mg 1.95 Na 0.01 Zn 1 Sb 2 , exceeding most of the previously reported p-type Mg 3 Sb 2 compounds. Our results further demonstrate the promising prospects of p-type Mg 3 Sb 2 -based material in the field of mid-temperature heat recovery.

multidisciplinary sciences
Thermoelectric performance improvement of p-type Mg3Sb2-based materials by Zn and Ag co-doping

Lihong. Huang,Tong Liu,Xiaobo Mo,Guocai Yuan,Runyu Wang,Hang Liu,Xiaobo Lei,Qinyong Zhang,Zhifeng Ren,Lihong Huang

DOI: https://doi.org/10.1016/j.mtphys.2021.100564

IF: 11.021

2021-11-01

Materials Today Physics

Abstract:Mg3Sb2-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements. However, pure and intrinsic p-type Mg3Sb2 manifests a poor thermoelectric performance because of its high electrical resistivity. It is reported that Ag doping in Mg sites can increase the mobility and carrier concentration of p-type Mg3Sb2; however, high thermal conductivity still limits the improvement of the ZT value. In the present work, Zn and Ag co-doping in Mg sites was carried out to optimize the thermoelectric performance of p-type Mg3Sb2. Experimental results revealed that the carrier concentration and mobility of Mg3Ag0.01Sb2 significantly increased after Zn doping, leading to an improvement of the power factor. Simultaneously, lattice thermal conductivity was significantly reduced due to the large mass difference between Zn and Mg. The Mg2.39Zn0.6Ag0.01Sb2 sample with an optimal doping concentration of 3.95 × 1019 cm−3 achieved a maximum ZT value of 0.84 at 773 K. Hence, Zn and Ag co-doping is an effective method to improve the thermoelectric performance of p-type Mg3Sb2.

materials science, multidisciplinary,physics, applied
Realizing an ultralow thermal conductivity via interfacial scattering and rational-electronic band reformation in p -type Mg3Sb2

S. Priyadharshini,V. Vijay,S. Kamalakannan,J. Archana,M. Navaneethan

DOI: https://doi.org/10.1063/5.0180722

IF: 4

2024-01-15

Applied Physics Letters

Abstract:Eco-friendly Magnesium antimonide (Mg3Sb2) has been extensively investigated as a promising and low-toxic thermoelectric material for intermediate (500–900 K) thermoelectric applications. Herein, p-type Zn-incorporated Mg3Sb2 was prepared by hot press technique, and its thermoelectric transport properties were investigated. The formation of Mg3−xZnxSb2 solid-solution plays a significant role in enhancing electrical conductivity of 34.59 S cm−1 due to the increased carrier concentration and reduced energy gap. Reduction in lattice thermal conductivity of 0.46 W m−1 K−1 at 753 K was obtained for Mg3−xZnxSb2 (x = 0.15) by combined scattering effect of dislocations, lattice strain, and interfaces, which is clearly seen in HR-TEM and strain analysis. These favorable conditions lead to an enhanced thermoelectric figure-of-merit (zT) of 0.25 at 753 K, which is 400% improved compared to the pure Mg3Sb2 sample.

physics, applied
Realizing high thermoelectric performance in p-type CaZn2Sb2-alloyed Mg3Sb2-based materials via band and point defect engineering

Lian Wu,Zizhen Zhou,Guang Han,Bin Zhang,Jian Yu,Hengyang Wang,Yao Chen,Xu Lu,Guoyu Wang,Xiaoyuan Zhou

DOI: https://doi.org/10.1016/j.cej.2023.145988

IF: 15.1

2023-11-01

Chemical Engineering Journal

Abstract:Layered Zintl-phase compound Mg3Sb2, possessing the advantages of high abundance, environmental friendliness, and low lattice thermal conductivity, are emerging materials for thermoelectric applications. However, p-type Mg3Sb2-based materials perform unfavorably than their n-type counterparts in terms of thermoelectric performance, which is mainly ascribed to undesirable valence band structure. Herein, we implement the strategy of alloying CaZn2Sb2 to achieve simultaneously improved electrical and thermal performance in p-type Mg3Sb2: (i) alloying CaZn2Sb2 not only optimizes the Seebeck coefficient, but also leads to improved carrier mobility; (ii) the mass and strain field fluctuations caused by alloying CaZn2Sb2 enhance phonon scattering, which significantly reduces the lattice thermal conductivity of the samples. By doping Ag in (Mg3.2Sb2)0.7(CaZn2Sb2)0.3 to realize higher electrical conductivity, the Mg2.22Ag0.02Ca0.3Zn0.6Sb2 sample reaches an excellent peak zT value of 0.90 at 823 K, which compares favorably to those of reported p-type Mg3Sb2-based materials. This study develops an effective pathway to advance thermoelectric performance of p-type Mg3Sb2-based materials.

engineering, chemical, environmental
Electrical property enhancement and lattice thermal conductivity reduction of n-type Mg3Sb1.5Bi0.5-based Zintl compound by In&Se co-doping

Tong Liu,Jiansong Liao,Hang Liu,Runyu Wang,Guocai Yuan,Jing Jiang,Yi Niu,Xiaobo Lei,Lihong Huang,Chao Wang,Qinyong Zhang

DOI: https://doi.org/10.1016/j.jmat.2022.11.012

IF: 8.589

2023-05-01

Journal of Materiomics

Abstract:Mg3Sb1.5Bi0.5-based Zintl compounds have attracted extensive attention as potential thermoelectric materials due to their earth-abundant elements. However, pure and intrinsic Mg3Sb1.5Bi0.5 manifests a poor thermoelectric performance because of its low electrical conductivity of about 3 × 102 S/m at room temperature. In this work, In and Se co-doping was carried out to optimize the thermoelectric performance of n-type Mg3Sb1.5Bi0.5-based material. The experimental results revealed that the carrier concentration and mobility of Mg3Sb1.5Bi0.5 significantly increased after In and Se co-doping, leading to an improvement of power factor. Simultaneously, lattice thermal conductivity was significantly reduced due to the large mass difference between In and Mg. A maximum zT of 1.64 at 723 K was obtained for the Mg3.17In0.03Sb1.5Bi0.49Se0.01 sample. And an average zT value of about 1.1 between 300 and 723 K was achieved, which insures its possible application at medium temperature range as a non-toxic and low-cost TE material.

materials science, multidisciplinary,chemistry, physical,physics, applied
Synergistic Effect of Band and Nanostructure Engineering on the Boosted Thermoelectric Performance of n‐Type Mg3+δ(Sb, Bi)2 Zintls

Ji‐Sheng Liang,Xiao‐Lei Shi,Ying Peng,Wei‐Di Liu,Heng‐Quan Yang,Cheng‐Yan Liu,Jun‐Liang Chen,Qi Zhou,Lei Miao,Zhi‐Gang Chen

DOI: https://doi.org/10.1002/aenm.202201086

IF: 27.8

2022-06-02

Advanced Energy Materials

Abstract:A new strategy of Y doping and nanostructuring is designed for achieving outstanding thermoelectric performance in Mg3.2Sb1.5Bi0.49Se0.01‐based Zintls with a peak ZT of ≈1.87 at 773 K, a high average ZT of ≈1.2, and a high energy conversion efficiency of ≈13.8% predicted by a temperature gradient of 450 K. Thermoelectric Mg3+δ(Sb, Bi)2 Zintls have attracted significant attention because of their high‐performing, eco‐friendly, and cost‐effective features, but their thermoelectric properties still need improvement for application to practical devices. Here an outstanding ZT of ≈1.87 at 773 K and a high average ZT of ≈1.2 in n‐type Y‐doped Mg3.2Sb1.5Bi0.49Se0.01 are reported, both of which rank as top values among the reported literature. First‐principles calculations indicate that substituting the Mg site with Y shifts the Fermi level into the conduction band and simultaneously narrows the bandgap, both strengthening the n‐type semiconducting feature and boosting the electron carrier density of Mg3.2Sb1.5Bi0.49Se0.01. A high power factor of ≈21.4 μW cm–1 K–2 is achieved at 773 K in Mg3.18Y0.02Sb1.5Bi0.49Se0.01, benefiting from the rationally tuned carrier density of ≈7.7 × 1019 cm–3 at this temperature. In addition, the doped Ys act as point defects to cause significant lattice distortions and strains, confirmed by comprehensive micro/nanostructure characterizations. These lattice imperfections suppress the lattice thermal conductivity to ≈0.41 W m–1 K–1 at 773 K, leading to such a high ZT. Furthermore, a high energy conversion efficiency of ≈13.8% is predicted by a temperature gradient of 450 K, indicating a great potential to be applied to practical devices for mid‐temperature applications.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,energy & fuels
Excellent thermoelectric performance of boron-doped n-type Mg3Sb2-based materials via the manipulation of grain boundary scattering and control of Mg content

Xiaoxi Chen,Jianbo Zhu,Dandan Qin,Nuo Qu,Wenhua Xue,Yumei Wang,Qian Zhang,Wei Cai,Fengkai Guo,Jiehe Sui

DOI: https://doi.org/10.1007/s40843-020-1559-4

2021-01-13

Science China Materials

Abstract:Thermoelectric devices require thermoelectric materials with high figure-of-merit (ZT) values in the operating temperature range. In recent years, the Zintl phase compound, n-Mg3Sb2, has received much attention owing to its rich chemistry and structural complexity. However, it hardly achieves high ZT values throughout the medium temperature range. Herein, by increasing the sintering temperature as much as possible, we successfully increased the average grain size of the compound by 15 times, and the grain boundary scattering was manipulated to obtain high carrier mobility of up to 180 cm2 V−1 s−1. Simultaneously, we optimized the Mg content for ultralow lattice thermal conductivity. We first doped the Mg3Sb2-based materials with boron for higher sintering temperature, good thermal stability, and higher hardness. The synergistic optimization of electrical and thermal transport resulted in excellent ZT values (0.62 at 300 K, 1.81 at 773 K) and an average ZT of 1.4 (from 300 to 773 K), which are higher than the state-of-the-art values for n-type thermoelectric materials, demonstrating a high potential in device applications.

materials science, multidisciplinary
Wide-temperature-range thermoelectric n-type Mg3(Sb,Bi)2 with high average and peak zT values

Jing-Wei Li,Zhijia Han,Jincheng Yu,Hua-Lu Zhuang,Haihua Hu,Bin Su,Hezhang Li,Yilin Jiang,Lu Chen,Weishu Liu,Qiang Zheng,Jing-Feng Li

DOI: https://doi.org/10.1038/s41467-023-43228-9

IF: 16.6

2023-11-16

Nature Communications

Abstract:Abstract Mg 3 (Sb,Bi) 2 is a promising thermoelectric material suited for electronic cooling, but there is still room to optimize its low-temperature performance. This work realizes >200% enhancement in room-temperature zT by incorporating metallic inclusions (Nb or Ta) into the Mg 3 (Sb,Bi) 2 -based matrix. The electrical conductivity is boosted in the range of 300–450 K, whereas the corresponding Seebeck coefficients remain unchanged, leading to an exceptionally high room-temperature power factor >30 μW cm −1 K −2 ; such an unusual effect originates mainly from the modified interfacial barriers. The reduced interfacial barriers are conducive to carrier transport at low and high temperatures. Furthermore, benefiting from the reduced lattice thermal conductivity, a record-high average zT > 1.5 and a maximum zT of 2.04 at 798 K are achieved, resulting in a high thermoelectric conversion efficiency of 15%. This work demonstrates an efficient nanocomposite strategy to enhance the wide-temperature-range thermoelectric performance of n-type Mg 3 (Sb,Bi) 2 , broadening their potential for practical applications.

multidisciplinary sciences
Synergy of grain size and texture effect for high-performance Mg3Sb2-based thermoelectric materials

Lianglu Hu,Qiang Zhang,Zhaohui Shan,Lifei Wang,Yun Zheng,Jianfeng Fan

DOI: https://doi.org/10.1016/j.scriptamat.2023.115629

IF: 6.302

2023-10-01

Scripta Materialia

Abstract:High-performance n-type Mg3Sb2-based thermoelectric materials have attracted much attention due to the six-fold degenerate carrier pockets in the conduction band. This study uncovers the electrical and thermal transport behaviors in different directions with respect to the spark plasma sintering (SPS) pressure that is rarely investigated. Results indicate that the grain size in the ⊥P direction (perpendicular to the SPS pressure direction) is slightly larger than that in the ∥P direction. In addition, a moderate texture is observed, reflecting a preferential orientation of the (001)-plane in the ⊥P direction. The synergy of both grain size and the texture leads to an improved electrical conductivity for Mg3.24Sb1.5Bi0.49Te0.01 compounds with lamellar crystal structures. Consequently, the highest thermoelectric figure of merit ZT peak ∼1.71 and ZT avg ∼1.12 (almost the best ZT values ever reported for Te-doped Mg3Sb2-based materials) are achieved in the ⊥P direction compared to the ∥P direction.

materials science, multidisciplinary,nanoscience & nanotechnology,metallurgy & metallurgical engineering
Significantly enhanced thermoelectric figure of merit of n-type Mg3Sb2-based Zintl phase compounds via co-doped of Mg and Sb site

Lu Yu,Wenhao Li,Zipei Zhang,Sitong Wei,Juan Li,Zhen Ji,Jingxuan Zhuo,Guiwu Lu,Weiyu Song,Shuqi Zheng

DOI: https://doi.org/10.1016/j.mtphys.2022.100721

IF: 11.021

2022-09-01

Materials Today Physics

Abstract:N-type Mg3Sb2 thermoelectric material has a complex crystal structure and electronic structure, which is a new thermoelectric material with excellent application prospects. The state density and band structure of Mg24Sb16 and Bi/Se/Pr–Se/Nd–Se doped Mg24Sb16 are first-principles calculated. Se/Pr–Se/Nd–Se doped increases the density of states around the Fermi level. Bi-doped does not impact the band structure because the electronic structure between Sb and Bi are similar. The band gap of Pr–Se/Nd–Se doped becomes narrower, which is more conducive to carrier transport and increases carrier concentration than that of single-doped Se. The experimental results show that Pr and Nd replace Mg to provide more electrons for the system. The carrier concentration of the co-doped sample increases significantly, thus improving the power factor and optimizing the samples' electrical properties. The highest ZT value of the Mg3.2Sb1.5Bi0.49Se0.01 sample is 1.21. Pr–Se/Nd–Se co-doped ZT values are 1.67 and 1.74, respectively, 38% and 43% higher than the Mg3.2Sb1.5Bi0.49Se0.01 sample. Multi-element doped is an effective strategy to improve the thermoelectric properties of materials.

materials science, multidisciplinary,physics, applied
Enhancing Thermoelectric Performance of Mg3Sb2 Through Substitutional Doping: Sustainable Energy Solutions via First-Principles Calculations

Muhammad Owais,Xian Luo,Bin Huang,Yanqing Yang,Mudassar Rehman,Ray Tahir Mushtaq

DOI: https://doi.org/10.3390/en17215358

IF: 3.2

2024-10-29

Energies

Abstract:Mg3Sb2-based materials, part of the Zintl compound family, are known for their low thermal conductivity but face challenges in thermoelectric applications due to their low energy conversion efficiency. This study addressed these limitations through first-principles calculations using the CASTEP module in Materials Studio 8.0, aiming to enhance the thermoelectric performance of Mg3Sb2 via strategic doping. Density functional theory (DFT) calculations were performed to analyze electronic properties, including band structure and density of states (D.O.S.), providing insights into the influence of various dopants. The semiclassical Boltzmann transport theory, implemented in BoltzTrap (version 1.2.5), was used to evaluate key thermoelectric properties such as the Seebeck coefficient, electrical conductivity, electronic thermal conductivity, and electronic figure of merit (eZT). The results indicate that doping significantly improved the thermoelectric properties of Mg3Sb2, facilitating a transition from p-type to n-type behavior. Bi doping reduced the band gap from 0.401 eV to 0.144 eV, increasing carrier concentration and mobility, resulting in an electrical conductivity of 1.66 × 106 S/m and an eZT of 0.757. Ge doping increased the Seebeck coefficient to −392.1 μV/K at 300 K and reduced the band gap to 0.09 eV, achieving an electronic ZT of 0.859 with low thermal conductivity (11 W/mK). Si doping enhanced stability and achieved an electrical conductivity of 1.627 × 106 S/m with an electronic thermal conductivity of 11.3 W/mK, improving thermoelectric performance. These findings established the potential of doped Mg3Sb2 as a highly efficient thermoelectric material, paving the way for future research and applications in sustainable energy solutions.

energy & fuels
Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

Runyu Wang,Siyun Luo,Xiaobo Mo,Hang Liu,Tong Liu,Xiaobo Lei,Qinyong Zhang,Jianjun Zhang,Lihong Huang

DOI: https://doi.org/10.1002/adsu.202300234

IF: 6.737

2023-08-04

Advanced Sustainable Systems

Abstract:Herein, a competitive ZT of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29 × 1019 cm−3 at room temperature. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3. The Bi2Te3 family has been considered a state‐of‐the‐art thermoelectric material for room‐temperature applications for over half a century. However, scarcity of the material Te has been a persistent issue. Recently, the discovery of n‐type Mg3(Bi, Sb)2‐based materials provides new hope for replacing traditional Bi2Te3, but their thermoelectric properties near room temperature still need improvement for application to practical devices. Herein, a competitive figure of merit of ≈0.8 at 300 K and a high power factor greater than 30 μW cm−1 K−2 at 300 K in n‐type Mg3.14Mn0.06Bi1.4Sb0.59Se0.01 is reported, benefiting from the rationally tuned carrier concentration of 2.29×1019 cm−3 at room temperature. Substituting the Mg site with Mn in Mg3.2Bi1.4Sb0.59Se0.01 changes the dominant carrier scattering mechanism from a mixed scattering of acoustic phonons and ionized impurities to acoustic phonon scattering. Mn doping in Mg3.2Bi1.4Sb0.59Se0.01 also enhances the mobility to 180 cm2 V−1 s−1, reduces the thermal conductivity, and significantly increases the quality factor β of the material. The high room temperature thermoelectric performance of n‐type Mn&Se co‐doped Mg3(Bi, Sb)2‐based materials makes them a highly competitive substitute for commercialized n‐type Bi2Te3.

materials science, multidisciplinary,green & sustainable science & technology
Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)2

Nan Chen,Hangtian Zhu,Guodong Li,Zhen Fan,Xiaofan Zhang,Jiawei Yang,Tianbo Lu,Qiulin Liu,Xiaowei Wu,Yuan Yao,Youguo Shi,Huaizhou Zhao

DOI: https://doi.org/10.1038/s41467-023-40648-5

IF: 16.6

2023-08-15

Nature Communications

Abstract:Abstract The low-temperature thermoelectric performance of Bi-rich n-type Mg 3 (Bi,Sb) 2 was limited by the electron transport scattering at grain boundaries, while removing grain boundaries and bulk crystal growth of Mg-based Zintl phases are challenging due to the volatilities of elemental reactants and their severe corrosions to crucibles at elevated temperatures. Herein, for the first time, we reported a facile growth of coarse-grained Mg 3 Bi 2- x Sb x crystals with an average grain size of ~800 μm, leading to a high carrier mobility of 210 cm 2 · V −1 · s −1 and a high z of 2.9 × 10 −3 K −1 at 300 K. A $$\Delta$$ Δ T of 68 K at T h of 300 K, and a power generation efficiency of 5.8% below 450 K have been demonstrated for Mg 3 Bi 1.5 Sb 0.5 - and Mg 3 Bi 1.25 Sb 0.75 -based thermoelectric modules, respectively, which represent the cutting-edge advances in the near-room temperature thermoelectrics. In addition, the developed grain growth approach can be potentially extended to broad Zintl phases and other Mg-based alloys and compounds.

multidisciplinary sciences
Enhanced Average Thermoelectric Figure of Merit of p-Type Zintl Phase Mg 2 ZnSb 2 via Zn Vacancy Tuning and Hole Doping

Yi Niu,Chengcheng Yang,Ting Zhou,Yan Pan,Jie Song,Jing Jiang,Chao Wang

DOI: https://doi.org/10.1021/acsami.0c09391

2020-07-27

Abstract:Isoelectronic Zn substitution at the Mg site has been proved to be effective in regulating the carrier concentration of p-type Mg3Sb2 Zintl phase. However, the reported thermoelectric performance is still unsatisfactory compared with that of n-type Mg3Sb2 due to the poor electrical transport properties. Here, we report an enhanced average ZT through improving low-temperature ZTs by introducing Zn vacancy followed suppressing the bipolar effect by doping. First, the Zn vacancy simultaneously increases the power factor and decreases the thermal conductivity, leading to a peak ZT value of ∼0.52 at 773 K in Mg2Zn0.98Sb2. Additionally, doping Li or Ag at the Mg site is identified as a high-efficiency strategy for further increasing the carrier concentration and hence suppressing the bipolar effect. Finally, a peak ZT of ∼0.73 at 773 K and an average ZT of ∼0.46 between 300 and 773 K were obtained in Mg1.98Li0.02Zn0.98Sb2.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsami.0c09391?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsami.0c09391</a>.Lorenz number, XRD, lattice parameter, TEM, and density (<a class="ext-link" href="/doi/suppl/10.1021/acsami.0c09391/suppl_file/am0c09391_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

materials science, multidisciplinary,nanoscience & nanotechnology
High-Performance Low-Cost n-Type Se-Doped Mg3Sb2-Based Zintl Compounds for Thermoelectric Application

Aref H Mamakhel,M. R. Jørgensen,Lirong Song,Jiawei Zhang,B. Iversen

DOI: https://doi.org/10.1021/ACS.CHEMMATER.7B01746

2017-06-19

Abstract:Thermoelectric materials, capable of converting heat directly into electricity without moving parts, provide a promising solid-state solution for waste heat harvesting. However, currently available commercial thermoelectric materials PbTe and Bi2Te3 are based on tellurium, an extremely scarce and expensive element, which prohibits large scale applications. Herein, we present a systematic study on a new low-cost Te-free material, n-type Se-doped Mg3Sb1.5Bi0.5, by combining the structure and property characterization with electronic structure and electrical transport modeling. Compared with pure Mg3Sb2, Se-doped Mg3Sb1.5Bi0.5 shows the considerably enhanced power factor as well as much lower thermal conductivity. The excellent electrical transport originates from a nontrivial near-edge conduction band with six conducting carrier pockets and a light conductivity effective mass as well as the weak contribution from a secondary conduction band with a valley degeneracy of 2. The accurate location of the conduct...

Physics,Engineering,Materials Science
Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Jiankang Li,Raju Chetty,Zihang Liu,Weihong Gao,Takao Mori

DOI: https://doi.org/10.1002/smll.202408059

IF: 13.3

2024-11-18

Small

Abstract:N‐type Mg3Sb2‐based material is recognized as a promising thermoelectric material. Ag is revealed as an effective dopant for the Mg3.2Sb1.5Bi0.49Te0.01 system with a different effect from Cu. A peak ZT of 1.64 at 673 K is achieved. Moreover, a 2‐pair module fabricated with MgAgSb as p‐type material, results in a high ηmax of ≈7.9% at relatively low ΔT of 277 K. The n‐type Mg3(Sb, Bi)2 compounds show great potential for wasted heat energy harvesting due to their promising thermoelectric properties. This work discovers that doping transition element Ag into the n‐type Mg3(Sb, Bi)2 can effectively optimize the power factor and suppress the lattice thermal conductivity simultaneously. Interestingly, the Ag doping has different effects compared to the isoelectronic and same group element Cu addition studied previously. A high power factor of 19.6 μW cm−1 K−2 is obtained at 673 K owing to the increased electrical conductivity. At the same time, the lattice thermal conductivity is reduced to ≈0.5 W m−1 K−1 because of enhanced phonon scattering induced by Ag atoms. These improvements lead to a peak figure of merit (ZT) of 1.64 at 673 K as well as a high average ZT of 1.27 is obtained from 323 K to 673 K. Furthermore, a thermoelectric single leg with a competitive conversion efficiency of ≈11% under a hot‐side temperature of 673 K is fabricated successfully. In addition, a 2‐pair module composed of n‐type Mg3(Sb, Bi)2 alloy and p‐type MgAgSb‐based compound demonstrates the high conversion efficiency of ≈7.9% at a temperature difference of 277 K, which will significantly upgrade the sustainable energy recycling technology.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology
Enhancing thermoelectric performance of AB 2 Sb 2 -type Zintl phase through band shaping and lattice distortion

Qi Xu,Kunpeng Zhao,Haoran Huang,Shun Wan,Qingyong Ren,Xiaowen Hao,Hexige Wuliji,Jingdan Lei,Tian-Ran Wei,Xun Shi

DOI: https://doi.org/10.1016/j.actamat.2024.120040

IF: 9.4

2024-05-26

Acta Materialia

Abstract:AB 2 Sb 2 -type Zintl phases, especially Mg 3 Sb 2 , have garnered widespread attention in virtue of their nontoxic constituent elements and outstanding thermoelectric performance in n-type materials. However, the p-type counterpart of AB 2 Sb 2 still struggles with a low figure of merit zT , primarily because of the limited valence band degeneracy, large band effective mass, and relatively high thermal conductivity. Here we simultaneously optimize the electrical and thermal transports of p-type AB 2 Sb 2 -based materials through shaping the band edge and distorting the crystal lattice. By alloying Zn at Mg2 site and Ca at Mg1 site, we successfully decorate the crystal lattice of Mg 3 Sb 2 in real space and thereby modify the band structure in reciprocal space. Zn alloying promotes the band degeneracy while Ca alloying reduce the single band effective mass, which largely promotes the transport of charge carriers. Moreover, the distorted crystal lattice effectively blocks the heat-carry phonons to reduce the lattice thermal conductivity κ L . A high zT of 0.81 is finally realized at 750 K in our Zn/Ca co-alloyed samples, which is three times larger than that of Mg 3 Sb 2 matrix. Our work opens new possibilities for the synthetic optimization of both electrical and thermal transports in Zintl phase and other thermoelectric systems.

materials science, multidisciplinary,metallurgy & metallurgical engineering

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Optimization of Thermoelectric Property of n‐Type Mg3Sb2 Near Room Temperature via Mn&Se Co‐Doping

Improved figure of merit (z) at low temperatures for superior thermoelectric cooling in Mg3(Bi,Sb)2

Enhanced Average Thermoelectric Figure of Merit of p-Type Zintl Phase Mg 2 ZnSb 2 via Zn Vacancy Tuning and Hole Doping

High-Performance Low-Cost n-Type Se-Doped Mg3Sb2-Based Zintl Compounds for Thermoelectric Application

Enhancing the Thermoelectric Performance of n‐Type Mg3Sb2‐Based Materials via Ag Doping

Enhancing thermoelectric performance of AB 2 Sb 2 -type Zintl phase through band shaping and lattice distortion