Abstract:Carbon nanotube field-effect transistors (CNT FETs) have been demonstrated to exhibit high performance only through low-temperature fabrication process and require a low thermal budget to construct monolithic three-dimensional (M3D) integrated circuits (ICs), which have been considered a promising technology to meet the demands of high-bandwidth computing and fully functional integration. However, the lack of high-quality CNT materials at the upper layer and a low-parasitic interlayer dielectric (ILD) makes the reported M3D CNT FETs and ICs unable to provide the predicted high performance. In this work, we demonstrate a multilayer stackable process for M3D integration of high-performance aligned carbon nanotube (A-CNT) transistors and ICs. A low-kappa (similar to 3) interlayer SiO2 layer is prepared from spin-on-glass (SOG) through processes with a highest temperature of 220 C-degrees, presenting low parasitic capacitance between two transistor layers and excellent planarization to offer an ideal surface for the A-CNT and device fabrication process. A high-quality A-CNT film with a carrier mobility of 650 cm(2) V-1 s(-1) is prepared on the ILD layer through a clean transfer process, enabling the upper CNT FETs fabricated with a low-temperature process to exhibit high on-state current (1 mA mu m(-1)) and peak transconductance (0.98 mS mu m(-1)). The bottom A-CNT FETs maintain pristine high performance after undergoing the ILD growth and upper FET fabrication. As a result, 5-stage ring oscillators utilizing the M3D architecture show a gate propagation delay of 17 ps and an active region of approximately 100 mu m(2), representing the fastest and the most compact M3D ICs to date.

Improving performance in near-threshold circuits using 3D IC technology

Improving Performance under Process and Voltage Variations in Near-Threshold Computing Using 3D ICs

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Novel Through-Silicon-Via Inductor-Based On-Chip DC-DC Converter Designs in 3D ICs

Speeding up carbon nanotube integrated circuits through three-dimensional architecture

Redundant Vias Insertion for Performance Enhancement in 3D ICs.

New Insights Into The Near-Threshold Design In Nanoscale Finfet Technology For Sub-0.2v Applications

Near-Threshold Sram Design On 40-Nm Cmos Technology For Low Power Design

Hybrid Thermal Aware Reconfigurable 3d Ic with Dynamic Power Gating Architecture

Using NEM relay to improve 3DIC cost efficiency

Power Delivery Design for 3-D ICs Using Different Through-Silicon Via (TSV) Technologies

Negative Design Margin Realization through Deep Path Activity Detection Combined with Dynamic Voltage Scaling in a 55 nm Near-Threshold 32-Bit Microcontroller

High-Performance Carbon Nanotube Optoelectronic Transistor With Optimized Process for 3D Communication Circuit Applications

Monolithic-3D Integration with 2D Materials: Toward Ultimate Vertically-Scaled 3D-ICs

Performance and power consumption analysis of memory efficient 3D network-on-chip architecture

Energy-Efficient Design and CNFET Implementation of GDI-Based Ternary Prefix Adders

Design and Implementation of Ternary Logic Integrated Circuits by Using Novel Two-Dimensional Materials

Optimized Cryo-CMOS Technology with VTH<0.2V and Ion>1.2mA/um for High-Peformance Computing

Speed and Scalability of Ambipolar Deep-Subthreshold TFTs for Ultralow-Power Printed Electronics

Physical Design of Monolithic 3 D ICs with Applications to Hardware Security

Challenges and Opportunities in Engineering of Next Generation 3D Microelectronic Devices: Improved Performance, Higher Integration Density