Abstract:Emerging macro- and flexible electronic applications such as foldable displays, artificial skins, and smart textiles grow rapidly into the market. Solution-processed thin-film transistors (TFTs) based on single-walled carbon nanotubes (SWCNTs) as the semiconductor channel can offer high performance, low cost and versatility for macro- and flexible electronics. Major challenges to the development of SWCNT-based TFTs include: (i) hysteresis in their transfer characteristics (TCs), (ii) difficulties in simultaneous achievements of high on-state current Ion and large on/off current ratio Ion/Ioff, and (iii) poor uniformity and scalability resulting from the poor solution processability. This thesis aims at developing reliable and simple process techniques for fabrication of the SWCNT-based TFTs that possess the afore-stated characteristics. It presents a systematic investigation to not only explore the fundamental device physics, but also develop novel fabrication methods for enhancement of device performance.First, issues related to the measurement of gate capacitance (Cg), the determination of current scalability, and the hysteresis in randomly networked SWCNTs are properly addressed. This leads to the establishment of a comprehensive methodology for extraction of carrier mobility (μ) for the SWCNT-based TFTs. In detail, the large hysteresis is effectively suppressed by adopting a pulsed drain current-gate voltage (Id-Vg) method in which the polarity of the gate pulse was alternating during the measurement. Different from most reported methods in the literature, Cg is accurately determined in our case by performing direct capacitance-voltage measurement on the TFTs.Second, with the employment of functional composites comprising SWCNTs embedded in a semiconducting polymer, poly-9,9 dioctyl-fluorene-cobithiophene (F8T2), as the semiconducting channel via facile solution processes under ambient conditions, the fabricated TFTs exhibit outstanding electrical performance with: (i) negligible hysteresis, (ii) high μ, (iii) high Ion and large Ion/Ioff, (iv) excellent uniformity and dimensional scalability, and (v) good stability. These highly desired performance parameters are achieved owing to an ideal composite structure with metallic SWCNTs being selectively removed and the remaining semiconducting SWCNTs being well wrapped by the polymer matrix.Finally, the developed TFTs basing on the SWCNT/F8T2 composite are used as the building block to construct some logic circuits. The resultant inverters, NANDs, and NORs are found to retain the small-hysteresis characteristics, with a cut-off frequency reaching 100 kHz. The results presented in this thesis advance the state-of-art SWCNT-based macroelectronics.

Speed and Scalability of Ambipolar Deep-Subthreshold TFTs for Ultralow-Power Printed Electronics

Ultrathin High-Mobility SWCNT Transistors with Electrodes Printed by Nanoporous Stamp Flexography

Aligned carbon nanotube integrated circuit downsizing toward a sub-10 nm node

Monolithic Three‐dimensional Integration of Aligned Carbon Nanotube Transistors for High‐performance Integrated Circuits

Exploring the Performance Limit of Carbon Nanotube Network Film Field‐Effect Transistors for Digital Integrated Circuit Applications

Fully-Solution-Processed Enhancement-Mode Complementary Metal-Oxide-Semiconductor Carbon Nanotube Thin Film Transistors Based on BiI3 -Doped Crosslinked Poly(4-Vinylphenol) Dielectrics for Ultralow-Power Flexible Electronics

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

Matched printed carbon nanotube complementary metal-oxide-semiconductor (CMOS) devices for flexible circuits

Capillary Flow Printing of Submicron Carbon Nanotube Transistors

Ultralow‐power and radiation‐tolerant complementary metal‐oxide‐semiconductor electronics utilizing enhancement‐mode carbon nanotube transistors on paper substrates

Thin Film FETs: Exploring the Performance Limit of Carbon Nanotube Network Film Field‐Effect Transistors for Digital Integrated Circuit Applications (adv. Funct. Mater. 16/2019)

Numerical Simulation on Novel Nano-Scale Lateral Double-Gate Tunneling Field Effect Transistor

Low-voltage High-Performance Flexible Digital and Analog Circuits Based on Ultrahigh-Purity Semiconducting Carbon Nanotubes

Thin-Film Field-Effect Transistors Based on Composites of Semiconducting Polymer and Carbon Nanotubes

Simulation of Novel Nano Low-Dimensional FETs at the Scaling Limit

High-Performance Carbon Nanotube Thin-Film Transistor Technology

Flexible CMOS Integrated Circuits Based on Carbon Nanotubes with Sub-10 Ns Stage Delays

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Sub-5-nm Ultra-thin In$_2$O$_3$ Transistors for High-Performance and Low-Power Electronic Applications

Design and Simulation of FinFET based digital circuits for low power applications

Carbon nanotube digital electronics