Abstract:A two-dimensional electron gas (2DEG) in (Al, Ga) N/GaN heterojunction (AlGaN/GaN) is a key factor that affects the performance of GaN-based high electron mobility transistor (HEMT) devices. Previous studies have shown that the ferroelectric polarization can effectively control the density of the 2DEG at the AlGaN/GaN interface; however, the correlation between two-dimensional distribution of ferroelectric polarization (i.e., ferroelectric domains) and its ability to confine the 2DEG is yet to be investigated. In this work, ferroelectric domain-induced modulation of the 2DEG in the AlGaN/GaN heterostructure was characterized using microscopic as well as local transport measurement techniques. The results suggest direct evidence for effective ferroelectric domain engineering in GaN HEMTs, as predicted by theoretical calculations. Additionally, a prototype device was fabricated, where gating was realized by utilizing the polarization of the ferroelectric domain. Considering the nonvolatile and reconfigurable advantages of a ferroelectric domain, the E-mode, D-mode, and even multi-channel output characteristics were realized in the same device by artificially engineered ferroelectric domain structures. These results offer a promising solution for the contradiction between the 2DEG density and gate controllability in GaN HEMTs, thereby showing a great potential of GaN radio frequency devices with further scaled gate lengths down to a few nanometers in the future.

Ferroelectric Pzt/Algan/Gan Field Effect Transistors

Ferroelectric Field Effect Transistor with A Double-Gate Structure on Algan/Gan Heterostructures

Electrical Properties of a PZT Ferroelectric Field Effect Transistor

Studies on Al-Doped Zno Thin-Film Transistors with Pb(Zr0.3ti0.7)O-3 Gate Insulator

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Polarization Effects in Ferroelectric Gate AlGaN/GaN High Electron Mobility Transistors

Fabrication And Characteristics Of A Metal/Ferroelectric/Polycrystalline Silicon/Insulator/Silicon Field Effect Transistor

Single-layer graphene field-effect transistors with ferroelectric PZT gate

Ferroelectric Effect and Equivalent Polarization Charge Model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT

Study on Characteristics of Ferroelectric Field Effect Transistor with Pt/PZT/Pt Structure

Ferroelectric Controlled Interfacial Effect on the Electronic Properties of PZT Gated IGZO Channel Thin-Film Transistors

Inaln/Gan Heterostructure Field-Effect Transistors on Fe-Doped Semi-Insulating Gan Substrates

Ferroelectric domain modulated AlGaN/GaN field effect transistor

Modulation Effect of Lead Zirconate Titanate for Zinc Oxide Channel Resistance in Ferroelectric Field Effect Transistor

Fabrication and Memory Characteristics of Ferroelectric Field Effect Transistors with MFMIS Structure

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure with Pb(Zr0.53Ti0.47)O3 on AlxGa1-xN/GaN Heterostructures

Microwave Performance of Ferroelectric-Gated GaN HEMTs

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

High Performance Top-Gated Ferroelectric Field Effect Transistors Based on Two-Dimensional ZnO Nanosheets

Ferroelectric Polarization Effect on Hysteresis Behaviors of Single-Walled Carbon Nanotube Network Field-Effect Transistors with Lead Zirconate-Titanate Gating