Abstract:The effects of dielectric thin films on the performance of GaN-based high-electron-mobility transistors (HEMTs) were reviewed in this work. Firstly, the nonpolar dielectric thin films which act as both the surface passivation layers and the gate insulators of the high-frequency GaN-based high-electron-mobility transistors were presented. Furthermore, the influences of dielectric thin films on the electrical properties of two-dimensional electron gas (2DEG) in the AlGaN/GaN hetero-structures were analyzed. It was found that the additional in-plane biaxial tensile stress was another important factor besides the change in surface potential profile for the device performance improvement of the AlGaN/GaN HEMTs with dielectric thin films as both passivation layers and gate dielectrics. Then, two kinds of polar gate dielectric thin films, the ferroelectric LiNbO3 and the fluorinated Al2O3, were compared for the enhancement-mode GaN-based HEMTs, and an innovative process was proposed. At last, high-permittivity dielectric thin films were adopted as passivation layers to modulate the electric field and accordingly increase the breakdown voltage of GaN-based HEMTs. Moreover, the polyimide embedded with Cr particles effectively increased the breakdown voltage of GaN-based HEMTs. Finally, the effects of high-permittivity dielectric thin films on the potential distribution in the drift region were simulated, which showed an expanded electric field peak at the drain-side edge of gate electrode.

Polarization Effects in Ferroelectric Gate AlGaN/GaN High Electron Mobility Transistors

Ferroelectric Effect and Equivalent Polarization Charge Model of PbZr0.2Ti0.8O3 on AlGaN/GaN MIS-HEMT

Analytical Model for AlGaN/GaN High Electron Mobility Transistor

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Hf$_{\text{0.5}}$Zr$_{\text{0.5}}$O$_{\text{2}}$-Based Ferroelectric Gate AlGaN/GaN HEMTs With Steep Subthreshold Swings

Impact of Al<sub> <i>x</i> </sub>Ga<sub>1-<i>x</i> </sub>N barrier thickness and Al composition on the electrical properties of ferroelectric HfZrO/Al<sub>2</sub>O<sub>3</sub>/AlGaN/GaN MFSHEMTs

Impact of Al X Ga 1-X N Barrier Thickness and Al Composition on Electrical Properties of Ferroelectric HfZrO/Al 2 O 3 /algan/gan MFSHEMTs

A Comparative Study on the Degradation Behaviors of Ferroelectric Gate GaN HEMT with PZT and PZT/Al2O3 Gate Stacks

Ferroelectric Field Effect Transistor with A Double-Gate Structure on Algan/Gan Heterostructures

Ferroelectric domain modulated AlGaN/GaN field effect transistor

Influence of ferroelectric polarization on the properties of two-dimensional electron gas in Pb(Zr0.53Ti0.47)O 3/AlxGa1-xN/GaN structures

Dielectric Thin Films for GaN-based High-Electron-mobility Transistors

Hetero-integration of Quasi Two-Dimensional PbZr0.2Ti0.8O3 on AlGaN/GaN HEMT and Non-Volatile Modulation of Two-Dimensional Electron Gas

Microwave Performance of Ferroelectric-Gated GaN HEMTs

Ferroelectric Pzt/Algan/Gan Field Effect Transistors

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Ferroelectric domain induced giant enhancement of two-dimensional electron gas density in ultrathin-barrier AlGaN/GaN heterostructures

The relationship between AlGaN barrier layer thickness and polarization Coulomb field scattering in AlGaN/GaN heterostructure field-effect transistors

The Modulation Effects of Charged Dielectric Thin Films on Two-Dimensional Electron Gas in Algan/Gan Heterostructure

Polarization engineering of two-dimensional electron gas at ε-(AlxGa1–x)2O3/ε-Ga2O3 heterostructure

Modulation Effect of Lead Zirconate Titanate for Zinc Oxide Channel Resistance in Ferroelectric Field Effect Transistor