Preparation of MgO Thin Films by Dual Ion Beam Sputtering

李贻杰,熊光成,连贵君,李洁,甘子钊
DOI: https://doi.org/10.1360/sb1993-38-20-1703
1993-01-01
Abstract:1 Introduction Recently much attention has been devoted to the study on the deposition and properties of oxide films. Oxide thin films, such as MgO, SiO_2 and ZrO_2, not only can be used as insulating layers in electronic devices but also act as buffer layers which can effectively obstruct the interface reaction between substrates and films or different layers. Moreover, in the technology of multilayer structures and Josephson junctions, it is also needed to grow insulating layers with perfect epitaxial structure. Up to now, it has been experimentally proved that a variety of oxide thin films can be used as buffer layers or
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