Conversion from memory to threshold resistance switching behavior by modulating compliance current
Jing Xu,Zhihu Dong,Yong Liu,Yuanyuan Zhu,Hongjun Wang,Jinbing Cheng,Changbo Zheng,Rui Xiong
DOI: https://doi.org/10.1063/5.0144784
IF: 4
2023-01-01
Applied Physics Letters
Abstract:The volatile and nonvolatile resistance switching (RS) characteristics can be, respectively, used for the selector and memristor, which have received much attention. Thus, it is essential to find a simple and effective method to control the specific RS behavior of NbOx materials due to the co-occurrence of memory RS and threshold RS behaviors. Here, the NbOx film with a thickness of 100 nm was prepared by magnetron sputtering at 80 degrees C. The tungsten steel tip/NbOx/Pt device exhibited the co-existence of memory RS and threshold RS behaviors. By properly regulating compliance current (I-cc), the specified memory and threshold RS behaviors were observed: the memory RS behavior occurred with an I-cc of 5 mA, the threshold RS behavior occurred with an I-cc of 10 mA, and integrated one selector-one-RRAM (resistive random access memory) (1S1R) RS behavior occurred with an I-cc of 50 mA. Moreover, individual RS behavior showed good performance, e.g., good stability of memory RS, good repeatability and concentrated voltage distribution of threshold RS. The memory RS behavior occurred mainly due to the formation and fracture of oxygen vacancy conductive filaments (CFs). Meanwhile, mediated by local Joule heating, thermally induced conductivity change was responsible for the threshold RS behavior. Under an I-cc of 50 mA, the oxygen vacancy CFs and a thermally induced conductivity change triggered the 1S1R RS behavior, which significantly suppressed the leakage current in RRAM 3D integrated structures. This work provides an efficient and convenient method for modulating and obtaining the desired RS behavior and better understanding the conversion mechanism between them.