Abstract:Recently, solid state white lighting, optical data storage and biochemical identification applications have led to a tremendous surge in research aimed at developing high power violet and ultraviolet light emitting diodes(V-LEDs and UV-LEDs). The white LEDs have come to be expected for use in lighting, which consists of a blue LEDs and yellow phosphor or an violet (or UV) LED and red-green-blue phosphors, but conversion efficiency and chromaticity of white LED with violet (or UV) LED were better than that with blue LEDs. Although high-brightness blue LEDs have been realized, high-power violet (or UV) LEDs have not yet been realized due to the high dislocation density. One possible reason for this is considered as the suppression of non-radiative recombination center in In xGa 1-xN active layers. It is known for violet (or UV) LEDs that the addition of a small amount of In to GaN active layer results in the improvement of emission wavelength and efficiency. Recently, the epitaxial lateral overgrowth (ELOG) is effective in reducing the dislocation density, so it can be used to fabricate high-power violet (or UV) LED. Violet-LEDs with InGaN/GaN multi-quantum-wells (MQW) structure were grown by low-pressure metalorganic vapor phase epitaxy (LP-MOVPE). The double crystal X-ray diffraction revealed distinct second order satellite peaks. The emitting peak of PL spectra is at 399.5nm with FWHM of about 15.5nm. InGaN/GaN MQW violet-LEDs have been successfully fabricated with forward voltage about 4V at 20mA injection current.

Visible Light-Emitting Diodes Using A-Plane GaN–InGaN Multiple Quantum Wells over R-Plane Sapphire

Ordered nanowire array blue/near-UV light emitting diodes.

Green Light Emitting Diodes on A-Plane GaN Bulk Substrates

V-shaped Semipolar InGaN/GaN Multi-Quantum-well Light-Emitting Diodes Directly Grown on C-Plane Patterned Sapphire Substrates

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Multicolored-light Emission from InGaN/GaN Multiple Quantum Wells Grown by Selective-Area Epitaxy on Patterned Si(100) Substrates

Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

Fabrication of High-Brightness Blue Ingan/Gan Mqw Leds

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Graphene/p-AlGaN/p-GaN Electron Tunnelling Light Emitting Diodes with High External Quantum Efficiency

Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

InGaN/GaN multi-quantum-well nanowires and light emitting

Growth of III-Nitride Materials and Blue Light-Emitting Diodes by Metal Organic Vapor Phase Epitaxy

Nonpolar M-Plane Thin Film Gan and Ingan/Gan Light-Emitting Diodes on Lialo2(100) Substrates

Emission Dynamics of GaN-based Blue Resonant-Cavity Light-Emitting Diodes

Demonstration of 621-Nm-wavelength InGaN-based Single-Quantum-well LEDs with an External Quantum Efficiency of 4.3% at 10.1 A/cm2

High‐Brightness Blue Light‐Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer

Coplanar Metal–semiconductor–metal Light-Emitting Devices with an N++ InGaN Layer and Their Application to Display

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

InGaN/GaN MQW Violet-LED Grown by LP-MOCVD

Multi-color broadband visible light source via three-dimensional GaN hexagonal annular microstructures