Abstract:Owing to its high luminous efficiency, chemical stabili ty and long lifetime, GaN based InGaN/GaN multiquantum wells (MQWs) LEDs is widely used in solidstate lighting and backlight of liquid crystal display. Recentl y, due to the rising demand of wearable and portable techno logy, the LEDs device size is required to be smaller. Compa red with traditional LEDs, the size of a single pixel of micr oLEDs can be decreased to tens of microns and each pixel ca n be controlled or driven independently, which have achiev ed much advantages in high resolution display and visiblelight communication (VLC). As to further improve the resol ution, the next trend is to shrink the size of LED pixe ls into several hundred nanometers, which is called na no-LEDs, or NLED for the next generation display. Here, we have investigated the fabrication of InGa N/GaN MQW nano-sized LEDs through bottom-up and top-down methods. Firstly, a series of highly ordered c-plane InGaN/GaN nanorod (NR) arrays were fabricate d by our developed soft UV-curing nanoimprint lithogr aphy on a wafer, as shown in Figure 1. Then, InGaN/ GaN nanorod LEDs were fabricated by an inductively coupled plasma(ICP) process. The radiative recombinati on in NLED samples is found to be greatly enhanced due to not only the suppressed non-radiative recombina tion but also the strain relaxation and optical waveguid e effects. Blue and green NLEDs have been finally rea lized, with good current–voltage performance and unifo rm luminescence. Secondly, InGaN/GaN multiple quant um well (MQW) nanowire ensembles grown on Si (11 1) substrates by plasma-assisted molecular beam epitax y (PA-MBE) are investigated. Well-oriented InGaN/GaN nanowires with perfect wurtzite crystal structure can b e achieved by optimizing the growth parameter of bott om GaN nanowires. As to realize electrical injected emission, InGaN/G aN single nanorod light-emitting diodes (NLEDs) have successfully been fabricated by nanoimprint lithography and focused ion beam-induced deposition. The current –voltage characteristics of single NLEDs show low lea kage current of 2 × 10 A at a reverse bias of −5 V and turn-ON voltage of ∼3.8 V. Linear polarization-or iented parallel to the c-axis with a degree of ∼50% w as discovered from the electroluminescence emission of single NLEDs[Figure 2]. Fig. 1. Schematic of our nanoimprint fabrication technology and SEM images of Nano-LEDs.

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InGaN/GaN Multi-Quantum-well Planar Metal-Semiconductor-metal Light-Emitting Diodes

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InGaN/GaN multi-quantum-well nanowires and light emitting

46.4: Fabrication of InGaN/GaN‐based Nano‐leds for Display Applications

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Fabrication of blue and green non-polar InGaN/GaN multiple quantum well light-emitting diodes on LiAlO2(100) substrates

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Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

Monolithic Semi-Polar ( 1 1 ¯ 01 ) InGaN/GaN Near White Light-Emitting Diodes on Micro-Striped Si (100) Substrate*

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Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

InGaN/GaN Multiple Quantum Wells on Selectively Grown GaN Microfacets and the Applications for Phosphor-Free White Light-Emitting Diodes

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

Monolithic full-color active-matrix micro-LED micro-display using InGaN/AlGaInP heterogeneous integration

Piezo-phototronic enhanced dual-wavelength InGaN/GaN multiple quantum wells Micro-LED arrays

Monolithic semi-polar () InGaN/GaN near white light-emitting diodes on micro-striped Si (100) substrate*