Abstract:The anisotropic thermal transport properties of low-symmetry two-dimensional materials play an important role in understanding heat dissipation and optimizing thermal management in integrated devices. Examples of efficient energy dissipation and enhanced power sustainability have been demonstrated in nanodevices based on materials with anisotropic thermal transport properties. However, the exploration of materials with high thermal conductivity and strong in-plane anisotropy remains challenging. Herein, we demonstrate the observation of anisotropic in-plane thermal conductivities of few-layer SiP2 based on the micro-Raman thermometry method. For suspended SiP2 nanoflake, the thermal conductivity parallel to P-P chain direction (κ∥b) can reach 131 W m-1 K-1 and perpendicular to P-P chain direction (κ⊥b) is 89 W m-1 K-1 at room temperature, resulting in a significant anisotropic ratio (κ∥b/κ⊥b) of 1.47. Note that such a large anisotropic ratio mainly results from the higher phonon group velocity along the P-P chain direction. We also found that the thermal conductivity can be effectively modulated by increasing the SiP2 thickness, reaching a value as high as 202 W m-1 K-1 (120 W m-1 K-1) for κ∥b (κ⊥b) at 111 nm thickness, which is the highest among layered anisotropic phosphide materials. Notably, the anisotropic ratio always remains at a high level between 1.47 and 1.68, regardless of the variation of SiP2 thickness. Our observation provides a new platform to verify the fundamental theory of thermal transport and a crucial guidance for designing efficient thermal management schemes of anisotropic electronic devices.

Intrinsic Thermal Conductivity and Its Anisotropy of Wurtzite Inn

Intrinsic Thermal Conductivities and Size Effect of Alloys of Wurtzite AlN, GaN, and InN from First-Principles

Intrinsic Thermal Conductivity of Wurtzite Al(X)Ga(1-X)N, In(X)Ga(1-X)N and In(X)Al(1-X)N from First-Principles Calculation

Anisotropic thermoelectric properties of Weyl semimetal NbX (X = P and As): a potential thermoelectric material.

Strong anisotropic thermal conductivity of monolayer WTe2

Temperature-Dependent Optical Properties of Wurtzite Inn

First-Principle-Based Full-Dispersion Monte Carlo Simulation of the Anisotropic Phonon Transport in the Wurtzite Gan Thin Film

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.

Influence of Strain on the Band Gap Energy of Wurtzite InN

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

First-principles calculation of electronic structures and optical properties of wurtzite InxAl1−xN alloys

Hole Mobility in Wurtzite Inn

Transport and mobility properties of wurtzite InN and GaN

Giant thermal conductivity and strain thermal response of nitrogen substituted diamane: a machine-learning-based prediction

Anomalous high thermal conductivity in heavy element compounds with van der Waals interaction

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy

Self-consistent phonon calculations and quartic anharmonic lattice thermal conductivity in 2D InS monolayer

Unraveling High Thermal Conductivity with In-Plane Anisotropy Observed in Suspended SiP2

Anisotropy of Zero-Resistance States in InN Films under an In-Plane Magnetic Filed

Superconductivity of InN As an Intrinsic Property