Abstract:Abstract Alloying is a widely employed approach for tuning properties of materials, especially for thermal conductivity which plays a key role in the working liability of electronic devices and the energy conversion efficiency of thermoelectric devices. Commonly, the thermal conductivity of an alloy is acknowledged to be the smallest compared to the parent materials. However, the findings in this study bring some different points of view on the modulation of thermal transport by alloying. The thermal transport properties of monolayer GaN, AlN, and their alloys of Ga x Al 1− x N are comparatively investigated by solving the Boltzmann transport equation (BTE) based on first-principles calculations. The thermal conductivity of Ga 0.25 Al 0.75 N alloy (29.57 Wm −1 K −1 ) and Ga 0.5 Al 0.5 N alloy (21.49 Wm −1 K −1 ) are found exceptionally high to be between AlN (74.42 Wm −1 K −1 ) and GaN (14.92 Wm −1 K −1 ), which violates the traditional knowledge that alloying usually lowers thermal conductivity. The mechanism resides in that, the existence of Al atoms reduces the difference in atomic radius and masses of the Ga 0.25 Al 0.75 N alloy, which also induces an isolated optical phonon branch around 18 THz. As a result, the scattering phase space of Ga 0.25 Al 0.75 N is largely suppressed compared to GaN. The microscopic analysis from the orbital projected electronic density of states and the electron localization function further provides insight that the alloying process weakens the polarization of bonding in Ga 0.25 Al 0.75 N alloy and leads to the increased thermal conductivity. The exceptionally high thermal conductivity of the Ga x Al 1− x N alloys and the underlying mechanism as revealed in this study would bring valuable insight for the future research of materials with applications in high-performance thermal management.

Intrinsic Thermal Conductivity of Wurtzite Al(X)Ga(1-X)N, In(X)Ga(1-X)N and In(X)Al(1-X)N from First-Principles Calculation

Intrinsic Thermal Conductivities and Size Effect of Alloys of Wurtzite AlN, GaN, and InN from First-Principles

Intrinsic Thermal Conductivity and Its Anisotropy of Wurtzite Inn

First-Principle Calculations of Elastic Properties of Wurtzite-Type Aluminum Nitride under Pressure

First-principles calculation of electronic structures and optical properties of wurtzite InxAl1−xN alloys

The exceptionally high thermal conductivity after ‘alloying’ two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)

Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

First-Principles Calculations of Band-Gap Properties of Zinc-Blende Bxga1-Xn and Bxga1-Xnyas1-Y Alloys

Deep neural network-based molecular dynamics simulations for AlxGa1-xN alloys and their thermal properties

First-Principle-Based Full-Dispersion Monte Carlo Simulation of the Anisotropic Phonon Transport in the Wurtzite Gan Thin Film

First-principles calculation of structural, electronic, and optical properties of zinc-blende AlxGa1-xN alloys

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Structural and Optical Properties of AlxGa1−xN (0.33 ≤ X ≤ 0.79) Layers on High-Temperature AlN Interlayer Grown by Metal Organic Chemical Vapor Deposition

Significantly suppressed thermal transport by doping In and Al atoms in Gallium Nitride

Effects of Point Defects and Dislocations on Spectral Phonon Transport Properties of Wurtzite Gan

Electronic Structure and Optical Properties of YAlN: A First‐Principles Study

Thermal Transport at the AlN-SiC Interface and Grain Boundary of AlN