Abstract:The accurate predicting of thermal conductivity of GaN semiconductors, especially GaN films, is of great importance for the thermal management in electronic devices. In this paper, a theoretical model based on the first-principles calculations and Debye-Callaway model is proposed to predict the thermal conductivity of GaN films, which is a function of temperature, isotope, point defects, dislocations, film thickness, and strain fields. Specifically, the coefficients in our theoretical model that used to capture umklapp scattering and phonon-isotope scattering are fitted with the data from first-principles calculations, and two sub-models for point defects scattering and dislocation scattering are discussed, respectively. The sub-model of boundary scattering with suppression function is introduced to describe the anisotropy of size effect, and the effect of in-plane strain (perpendicular to polar axis) is also discussed. The comparison between theoretical predictions and experimental data shows that the model performs well roughly in a large temperature range from 300 to 500 K, with an around 20% difference at room temperature. Our predicted temperature dependent thermal conductivity deviates slightly from the measurements, which may result from the lack of high-order phonon scattering in our model, e.g., four-phonon scattering. Our results also show that the first-principles calculations for GaN overestimates the influence of isotope scattering. We further study the thermal transport properties of GaN film which are influenced by the thickness, dislocation density, and point defect density through using the new theoretical model. Significant reduction of thermal conductivity is found to occur at a film thickness of 10 mu m, which is consistent with the findings from the first-principles calculations. The isotope and defects including point defects and dislocations are found to have a weak influence on the thermal conductivity when the thickness of GaN film is larger than 100 nm, while the influence becomes significant for the film with and below 100 nm in thickness. In addition, dislocations and point defects start to reduce thermal conductivity significantly when the surface density of dislocations increases to 10(10) cm(-2) and point defect density reaches 10(18) cm(-3).

Intrinsic Thermal Conductivities and Size Effect of Alloys of Wurtzite AlN, GaN, and InN from First-Principles

Intrinsic Thermal Conductivity of Wurtzite Al(X)Ga(1-X)N, In(X)Ga(1-X)N and In(X)Al(1-X)N from First-Principles Calculation

Intrinsic Thermal Conductivity and Its Anisotropy of Wurtzite Inn

First-principles Study of Size Effects on Electrical Properties of AlN/GaN Heterostructured Nanofilms

The exceptionally high thermal conductivity after ‘alloying’ two-dimensional gallium nitride (GaN) and aluminum nitride (AlN)

Thermal conductivity of crystalline AlN and the influence of atomic-scale defects

Dissimilar Thermal Transport Properties in Κ-Ga2o3 and Β-Ga2o3 Revealed by Homogeneous Nonequilibrium Molecular Dynamics Simulations Using Machine-Learned Potentials

Experimental Observation of High Intrinsic Thermal Conductivity of AlN

Effect of atomic substitution and structure on thermal conductivity in monolayers H-MN and T-MN (M = B, Al, Ga)

Tunable thermal conductivity of thin films of polycrystalline AlN by structural inhomogeneity and interfacial oxidation

First-principles calculation of electronic structures and optical properties of wurtzite InxAl1−xN alloys

Effects of W alloying on the electronic structure, phase stability and thermoelectric power factor in epitaxial CrN thin films

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Ab initio calculation of structural and electronic properties of Al$_x$Ga$_{1-x}$N and In$_x$Ga$_{1-x}$N alloys

Atomistic Simulation of the Size and Orientation Dependences of Thermal Conductivity in GaN Nanowires

Growth-microstructure-thermal property relations in AlN thin films

First-Principle-Based Full-Dispersion Monte Carlo Simulation of the Anisotropic Phonon Transport in the Wurtzite Gan Thin Film

Effect of the Alloyed Interlayer on the Thermal Conductance of Al/GaN Interface

First-principle study on the effect of point defects on the mechanical properties, thermal conductivity, and optical properties of wurtzite AlN

Intrinsically low lattice thermal conductivity of monolayer hexagonal aluminum nitride (h-AlN) from first-principles: A comparative study with graphene

Thermal Conductivity Modeling of GaN Films