Abstract:In recent years, metallic nano-light-emitting diode (LED) arrays have gained wide attention as new-generation lighting materials. This study evaluates the optical properties of triangular array Ag nanodisc GaN-LED and analyses its effects on internal radiation and external light extraction of LED by changing the cycle and height of the Ag nanodisc. We use FDTD software for simulation. The results showed that the increase in the spontaneous emission rate depended on the localised surface plasmon (LSP) generated by the Ag nanodisc and the multiple quantum well layer, considering the coupling between the surface plasmon and the dipole enhanced the internal energy. Owing to the optimal structural parameters, the spontaneous emission rate was enhanced by 4.79 times, and the power integral of the internal radiation source increased from 0.037 to 0.177. Furthermore, the enhanced energy from coupling did not radiate outward and was limited to the surface of the Ag nanodisc. Additionally, a two-dimensional photonic crystal structure was embedded in the p-layer to transform the LSP into a radiation plasmon. When the transmittance was 0.32, the top surface power integral increased from 0.021 to 0.131, light output power increased by 5.47 times, and the factor of light extraction efficiency increased by 1.79 times. These results provide practical values that can be applied in optimising the design of high-performance GaN-based LED.

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Light Extraction Enhancement of GaN LEDs by Hybrid ZnO Micro-Cylinders and Nanorods Array

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Enhanced Light Extraction from Gan-Based Leds with A Bottom-Up Assembled Photonic Crystal

Enhanced Light Extraction from Ingan/Gan-Based Light Emitting Diodes Epistructure with Icp-Etched Nanoisland Gan:Mg Surface

Light Extraction Enhancement of InGaN Based Micro Light-Emitting Diodes with Concave-Convex Circular Composite Structure Sidewall

Gan-Based Light Emitting Diodes With Periodic Nano-Structures On The Surface Fabricated By Nanoimprint Lithography Technique

Enhanced Light Extraction of InGaN LEDs with Photonic Crystals Grown on P-Gan Using Selective-Area Epitaxy and Nanospherical-Lens Photolithography

Light transmission enhancement from hybrid ZnO micro-mesh and nanorod arrays with application to GaN-based light-emitting diodes.

Improvement of Light Extraction Efficiency in GaN-based Light-Emitting Diodes by Addition of Complex Photonic Crystal Structure

Design of Wide-Bottomed Patterned Sapphire Substrates for Performance Improvement of Gan-Based Light-Emitting Diodes

Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate with Self-Assembled Conical Arrays

Enhanced Optical Power of GaN-based Light-Emitting Diode with Compound Photonic Crystals by Multiple-Exposure Nanosphere-Lens Lithography