Abstract:With an external laser excitation, the electroluminescence (EL) of GaInN/GaN green light emitting diodes (LEDs) grown on sapphire by metal organic vapor phase epitaxy has been investigated. The EL was found significantly enhanced under this bias and the difference can not merely be attributed to additional photoluminescence (PL). Under 325 nm photon bias, the EL enhancement starts at its highest value and decreases along with an increase of the LED current. Under 408 nm and 488 nm bias, it increases first to a value smaller than that of the 325 nm bias and then decreases with a much lower rate along the current increase. The EL enhancement is attributed to the more efficient carrier injection into quantum wells (QWs) resulting from the screening of the QW polarization by photon bias. Therefore, an enhanced balance of majority and minority carriers was obtained resulting in a better radiative recombination rate. Meanwhile, the current-voltage characteristics show a negative current first and then a voltage reduction as forward voltage increases. The reverse photocurrent indicates carrier loss due to the solar cell effect in our LED device while at high current region the carrier loss is attributed to another effect controlled by the external electrical field. At the balance point of those two effects, the EL enhancement is the highest. These findings clarify the transition from highly efficient radiative recombination at low current density to the region of efficiency droop at high current densities.

Characteristics of Dotlike Green Satellite Emission in GaInN Light Emitting Diodes

Junction Temperature, Spectral Shift, and Efficiency in GaInN-based Blue and Green Light Emitting Diodes

LOW TEMPERATURE ELECTROLUMINESCENCE OF GREEN AND DEEP GREEN GaInN/GaN LIGHT EMITTING DIODES

InGaN Quantum Dot Green Light-Emitting Diodes with Negligible Blue Shift of Electroluminescence Peak Wavelength

Analysis of the Quantum Efficiency of Gainn/Gan Light Emitting Diodes in the Range of 390-580 Nm

Comparison of Temperature Dependent Electroluminescence of InGaN/GaN and AlGaInP Based LEDs

Green InGaN/GaN based LEDs: high luminance and blue shift

Green Light Emitting Diodes under Photon Modulation

Very Strong Nonlinear Optical Absorption in Green GaInN/GaN Multiple Quantum Well Structures

Green InGaN/GaN LEDs: High luminance and blue shift

Spontaneous Emission Studies for Blue and Green InGaN-Based Light-Emitting Diodes and Laser Diodes

Depth Profile of Donor–acceptor Pair Transition Revealing Its Effect on the Efficiency of Green LEDs

Effect of V-Shaped pits on optical properties of GaN-Based green light-emitting diodes

Reverse Leakage Current Characteristics of GaN/InGaN Multiple Quantum-Wells Blue and Green Light-Emitting Diodes

Green and Red Light-Emitting Diodes Based on Multilayer InGaN/GaN Dots Grown by Growth Interruption Method

Characterization of GaInN/GaN layers for green emitting laser diodes

Structural Analysis in Low-V-defect Blue and Green GaInN/GaN Light Emitting Diodes

Study on Optical Properties and Internal Quantum Efficiency Measurement of GaN-based Green LEDs

Ingan/Gan Multilayer Quantum Dots Yellow-Green Light-Emitting Diode with Optimized Gan Barriers

Study of the dominant luminescence mechanism in InGaN∕GaN multiple quantum wells comprised of ultrasmall InGaN quasiquantum dots

Optical Properties of GaN-Based Green Light-Emitting Diodes Influenced by Low-Temperature p-GaN Layer