Abstract:Electrically active defects in carbon-doped GaN layers were studied with a metal/carbon-doped GaN (GaN:C)/Si-doped GaN (GaN:Si) MIS structure. The GaN:C layers were grown with three different carbon doping concentrations (NC). A semi-vertical metal/semi-insulator/n-type semiconductor (MIS) device was fabricated to perform deep-level transient spectroscopy (DLTS) measurements. Two electron traps E1 and E2 with energy level at EC − (0.22–0.31) eV and EC − (0.45–0.49) eV were observed. E1 and E2 are associated with a nitrogen vacancy VN-related defect in the strain field of extended defects and a nitrogen antisite defect, respectively. By changing the reverse bias voltage of the DLTS measurement, the location and relative defect concentration of the E1 and E2 traps could be verified. A dominant electron trap E3 with an unusual capture cross section was only observed in devices with an NC = 2 × 1019 cm−3 GaN:C layer. This may charge carriers from a defect band and lead to the charge redistribution in the GaN:C layer when forward biased. A hole trap H1 with energy level at EV + 0.47 eV was found for the pulse bias in the forward ON-state. H1 is suggested to correspond with the CN induced 0/+ donor level. By analyzing the schematic band diagrams across the MIS structure, the carrier transport and defect charging mechanisms underlying the DLTS transient measurements are illustrated. The identification of the trap states in the carbon-doped GaN with different NC gives further understanding on the carbon doping impact on electric characteristics of GaN power devices made on Si substrates.

Defect Reduction in Gan Epilayers Grown by Metal-Organic Chemical Vapor Deposition with in Situ Sinx Nanonetwork

Defect Reduction Via Selective Lateral Epitaxy of Gan on an Innovative Masked Structure with Serpentine Channels

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Characterisation of Defects at Non-Polar GaN/InGaN Junctions in Novel Materials for Application in Light Emitting Diodes

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Analysis of Semi-Insulating Carbon-Doped GaN Layers Using Deep-Level Transient Spectroscopy

Study of the Defects in GaN Epitaxial Films Grown on Sapphire by HVPE

Defect States in Cubic GaN Epilayer Grown on GaAs by Metalorganic Vapor Phase Epitaxy

The Origin and Evolution of V-defects in InxAl1−xN Epilayers Grown by Metalorganic Chemical Vapor Deposition

Reduction Mechanisms for Dislocation Densities in GaN Heteroepitaxy over Si Substrate Patterned with a Serpentine Channel Structure

Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel

The Epitaxy of GaN in Deep and Submicron Holes over Si Substrate

Investigation of Dislocations and Defects in Epitaxial Lateral Overgrown GaN by Photoelectrochemical Wet Etching

Investigation of GaN with Low Threading Dislocation Density Grown on Graphene/Sputtered AlN Composite Substrate

Epitaxy of GaN in High Aspect Ratio Nanoscale Holes over Silicon Substrate

Effective Suppression of Deep Interface States and Dielectric Trapping in SiNx/GaN Metal-Insulator-semiconductor Structures by a SiOxNy Interfacial Layer Grown by Plasma-Enhanced Atomic Layer Deposition

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Coordinated Stress Management and Dislocation Control in GaN Growth on Si (111) Substrates by Using a Carbon Nanotube Mask.

Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.

Anisotropic Defect Reduction in Non-Polar A-Plane GaN Grown by Hydride Vapor Phase Epitaxy on Maskless Patterned Templates

Suppression and Characterization of Interface States at Low-Pressure-chemical-vapor-deposited SiNx/III-nitride Heterostructures