Abstract:We present a dual active layer structure composed of indium–zinc oxide (InZnO) and indium–magnesium–zinc oxide (InMgZnO), which is fabricated using a simple solution process. By utilizing a heterojunction structure, combined with the high mobility of the front channel (InZnO) and the low ${\mathrm{\scriptstyle OFF}}$ -state current of the back channel (InMgZnO), we are able to achieve thin-film transistor (TFT) devices with enhanced performance and greater stability. Finally, we are able to optimize the device by optimizing the front channel thickness and treating the heterojunction interface with oxygen plasma, achieving a mobility ( $\mu _{\text {sat}}$ ) of 5.94 cm2/( $\text {V}\cdot \text {s}$ ), a threshold voltage of 0.98 V, an ${I} _{ { {\text {ON}}}}/{I} _{ { {\text {OFF}}}}$ ratio of $7.49\times 10^{{8}}$ , and a subthreshold swing (SS) of 325 mV/decade. Furthermore, the device maintains almost unchanged hysteresis voltage and exhibits high bias stability, which is demonstrated by the minimal threshold voltage variation of only 0.27 and −0.21 V under positive gate bias (PBS) and negative gate bias (NBS) for 1 h, respectively. The high electrical performance and stability of heterojunction TFTs can be attributed to the reduced interfacial defect state achieved through oxygen plasma treatment, as well as the electron redistribution occurring at the heterojunction interface.

Combustion-Process Derived Comparable Performances of Zn-(In:Sn)-O Thin-Film Transistors with A Complete Miscibility

Combustion-Solution Processed Amorphous ZnTiSnO Thin Films and Performances as Thin-Film Transistors

Amorphous ZnAlSnO Thin-Film Transistors by a Combustion Solution Process for Future Displays

Back-End-of-Line Compatible InSnO/ZnO Heterojunction Thin-Film Transistors With High Mobility and Excellent Stability

Thin-Film Transistors Based on Amorphous ZnNbSnO Films with Enhanced Behaviors

Effect of Mg Content on Characteristics of Amorphous ZnMgSnO Thin-Film Transistors by a Combustion Solution Process

Performance Enhancement of Indium Zinc Oxide Thin-Film Transistors Through Process Optimizations

High-mobility and high-reliability Zn-incorporated amorphous In2O3-based thin-film transistors

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Ultrathin-Film Transistors Based on Ultrathin Amorphous InZnO Films

Performance Improvement of Amorphous Thin-Film Transistors with Solution-Processed InZnO/InMgZnO Bilayer Channels

Performance enhancement of ATZO TFTs by component control and post treatment

High performance of ZnSnO thin-film transistors engineered by oxygen defect modulation

The Investigation of Indium-Free Amorphous Zn-Al-Sn-O Thin Film Transistor Prepared by Magnetron Sputtering

Achieving High Performance of ZnSnO Thin-Film Transistor via Homojunction Strategy

In-Situ Fluorine-Doped Znsno Thin Film and Thin-Film Transistor

Solution-based SnGaO thin-film transistors for Zn- and In-free oxide electronic devices

Combustion-assisted low-temperature ZrO 2 /SnO 2 films for high-performance flexible thin film transistors

High-Performance Amorphous InGaZnO Thin Film Transistor With High-k Van Der Waals Molecular Dielectric

Nitrogen-Doped Amorphous InZnSnO Thin Film Transistors with a Tandem Structure for High-Mobility and Reliable Operations

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers