Low Power W:Alox/Wox Bilayer Resistive Switching Structure Based on Conductive Filament Formation and Rupture Mechanism

Yue Bai,Huaqiang Wu,Ye Zhang,Minghao Wu,Jinyu Zhang,Ning Deng,He Qian,Zhiping Yu

DOI: https://doi.org/10.1063/1.4803462

IF: 4

2013-01-01

Applied Physics Letters

Abstract:We report the design and fabrication of W:AlOx/WOx bilayer based resistive switching cells in a standard 0.18 μm CMOS process with only one extra mask. The devices show excellent performance with low power consumption. Low operation voltages (SET voltage < 1.5 V, RESET voltage < 1.3 V) are achieved, and specifically, the RESET and SET currents are lower than 1 μA. For the 0.3 μm×0.3 μm active area of the cell, the current density is below 1.1×103A/cm2, which is much smaller than previous reported results. To reveal the resistive switching mechanism, various physical analysis techniques were employed to examine the microstructures, compositions, and chemical states. Current-voltage and capacitance-voltage electrical characterizations were carried out on these devices. Based on the physical and electrical characteristics, a conductive filament formation and rupture mechanism is proposed to explain the W:AlOx/WOx bilayer structure resistive switching phenomena.