Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

廖英杰,娄艳辉,王照奎,廖良生,Liao Ying-Jie,Lou Yan-Hui,Wang Zhao-Kui,Liao Liang-Sheng
DOI: https://doi.org/10.1088/1674-1056/23/11/118508
2014-01-01
Chinese Physics B
Abstract:A controllable etching process for indium zinc oxide (IZO) films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices (OLEDs), a suppression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide (ITO) anode etched by a conventional strong etchant of aqua regia.
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