Abstract:GaN materials are widely used in optoelectronic devices, high-power devices and high-frequency microwave devices because of their excellent characteristics, such as wide frequency band, high breakdown electric field, high thermal conductivity, and direct band gap. Owing to the large lattice mismatch and thermal mismatch brought by the heterogeneous epitaxy of GaN material, the GaN epitaxial layer will produce a great many dislocations in the growth process, resulting in the poor crystal quality of GaN material and the difficulty in further improving the device performance. Therefore, researchers have proposed the use of vicinal substrate to reduce the dislocation density of GaN material, but the dislocation annihilation mechanism in GaN film on vicinal substrate has not been sufficiently studied. Therefore, in this paper, GaN thin films are grown on vicinal sapphire substrates at different angles by using metal organic chemical vapor deposition technique. Atomic force microscope, high resolution X-ray diffractometer, photoluminescence testing, and transmission electron microscopy are used to analyze in detail the effects of vicinal substrates on GaN materials. The use of vicinal substrates can significantly reduce the dislocation density of GaN materials, but lead to degradation of their surface morphology morphologies. And the larger the substrate vicinal angle, the lower the dislocation density of the sample is. The dislocation density of the sample with a 5o bevel cut on the substrate is reduced by about one-third compared to that of the sample with a flat substrate. The special dislocation termination on the mitered substrate is observed by transmission electron microscopy, which is one of the main reasons for the reducing the dislocation density on the mitered substrate. The step merging on the vicinal sapphire substrate surface leads to both transverse growth and longitudinal growth of GaN in the growth process. The transverse growth region blocks the dislocations, resulting in an abrupt interruption of the dislocations during propagation, which in turn reduces the dislocation density. Based on the above phenomena, a model of GaN growth on vicinal substrate is proposed to explain the reason why the quality of GaN crystal can be improved by vicinal substrate.

Threading Dislocation Annihilation in the GaN Layer on Cone Patterned Sapphire Substrate

Evolution and Control of Dislocations in Gan Grown on Cone-Patterned Sapphire Substrate by Metal Organic Vapor Phase Epitaxy

Defect Structure and Evolution of GaN-Based Light-Emitting Diodes on Planar and Cone-Patterned Sapphire Substrates

Low Threading Dislocation Density in GaN Films Grown on Patterned Sapphire Substrates

Threading Dislocation Density Comparison Between GaN Grown on the Patterned and Conventional Sapphire Substrate by High Resolution X-ray Diffraction

Influence of Threading Dislocations on the Luminescence Efficiency of GaN Heteroepitaxial Layers

Influence of Threading Dislocations on Physical Properties of GaN Epilayers

Optimization of Hetero-Epitaxial Growth for the Threading Dislocation Density Reduction of Germanium Epilayers

Study on Dislocation Annihilation Mechanism of the High-Quality GaN Grown on Sputtered AlN/PSS and Its Application in Green Light-Emitting Diodes

Dislocation half-loop control for optimal V-defect density in GaN-based light emitting diodes

The Growth and Characterization of GaN Films on Cone-Shaped Patterned Sapphire by MOCVD

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Structural Characterization of Homoepitaxial Blue GaInN/GaN Light-Emitting Diodes by Transmission Electron Microscopy

Dislocation Reduction Mechanism Os GaN Films on Vicinal Sapphire Substrates

Lateral Epitaxial Overgrowth of GaN Films on Patterned Sapphire Substrates Fabricated by Wet Chemical Etching

Dislocation Reduction Through Nucleation and Growth Selectivity of Metal-Organic Chemical Vapor Deposition GaN

Dislocation Reduction in GaN on Sapphire by Epitaxial Lateral Overgrowth

Threading Dislocations in Epitaxial InN Thin Films Grown on (0001) Sapphire with a GaN Buffer Layer

Morphology Of Threading Dislocations In High-Resistivity Gan Films Observed By Transmission Electron Microscopy

Role of threading dislocation structure on the x‐ray diffraction peak widths in epitaxial GaN films

Dislocation Analysis in Homoepitaxial Gainn/Gan Light Emitting Diode Growth