Jixian Xu,Oleksandr Voznyy,Mengxia Liu,Ahmad R. Kirmani,Grant Walters,Rahim Munir,Maged Abdelsamie,Andrew H. Proppe,Amrita Sarkar,F. Pelayo García de Arquer,Mingyang Wei,Bin Sun,Min Liu,Olivier Ouellette,Rafael Quintero-Bermudez,Jie Li,James Fan,Lina Quan,Petar Todorovic,Hairen Tan,Sjoerd Hoogland,Shana O. Kelley,Morgan Stefik,Aram Amassian,Edward H. Sargent

Abstract:Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size1,2. Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon3. Advances in surface passivation2,4–7, combined with advances in device structures8, have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 20169. Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to ~300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (JSC) and open-circuit voltage (VOC), as seen in previous reports3,9–11. Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic–amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses (~600 nm) and record values of JSC (32 mA cm−2) are fabricated. The VOC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.

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Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Silicon Quantum Dots In An Oxide Matrix For Third Generation Photovoltaic Solar Cells

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Study on silicon quantum dots sensitized solar cells

Silicon nanocrystals synthesized using very high frequency non-thermal plasma and their application in photovoltaics

In Situ Formation of Iodide Precursor for Perovskite Quantum Dots with Application in Efficient Solar Cells

Silicon-nanocrystal-incorporated Ternary Hybrid Solar Cells

Application of Silicon Nanocrystals in Solar Cells

Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications

Silicon quantum dot/crystalline silicon solar cells

AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Antireflective Layer in Enhancing Photovoltaic Performance

2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids

Size-Dependent Electroluminescence From Si Quantum Dots Embedded In Amorphous Sic Matrix