Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Germanium-Silicon Quantum Dots Produced by Pulsed Laser Deposition for Photovoltaic Applications

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Quantum Dots In An Oxide Matrix For Third Generation Photovoltaic Solar Cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Optical Characterisation of Silicon Nanocrystals Embedded in SiO2/Si3N4 Hybrid Matrix for Third Generation Photovoltaics.

Study on silicon quantum dots sensitized solar cells

Research Progress in Application of Silicon Quantum Dots in Optoelectronic Devices

Silicon and Germanium Nanocrystal Inks for Low-Cost Solar Cells

Emission cells with quantum dots on silicon chip prepared by using fs pulsed laser

Tunable Quantum Dot Lasers Grown Directly on Silicon

Silicon quantum dot/crystalline silicon solar cells

Low-Cost Synthesis of Silicon Quantum Dots with Near-Unity Internal Quantum Efficiency

AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Antireflective Layer in Enhancing Photovoltaic Performance

Ge Quantum-Dot Enhanced C-Si Solar Cell for Improved Light Trapping Efficiency

Electroluminescence with Micro-Watt Output from Ultra-Small Sized Si Quantum Dots/amorphous SiO2 Multilayers Prepared by Laser Crystallization Method

In situ growth MoS 2 quantum dots as promising interface materials for silicon solar cells