Abstract:Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especially the oxide-film interface extremely crucial to understand. The effects of the gate voltage on the charge trapping in TI-based FET devices are reported in this work. Sputtered BixSe1-x was chosen as the TI material. The interfacial chemistry was characterized using X-ray photoelectron spectroscopy (XPS), which shows a presence of Mg2+ and oxygen impurities. A unique hysteresis behavior was found for the gate transfer characteristics, with respect to the gate voltage. This was attributed to the charge trapping in the gate oxide and across the SiO2/BixSe1-x interface. We simulated the effects of charge fluctuations on the resistivity of the film. These devices operate under accumulation mode rather inversion mode. Application of positive gate voltage results in accumulation of electrons in the “n-type” BixSe1-x layer resulting in an increase of conductivity. In order to explain the drain current-gate voltage behavior, we used a simple polynomial model to describe the change in the device characteristics due to charge traps. The model was fitted with our experimental results. We further analyzed the gate leakage current, which showed a good match with trap-assisted tunneling (TAT) process that was used to derive trap parameters. The obtained trap parameters show the presence of ultra-deep charge traps contributing to the hysteretic behavior.Topological materials have attracted a lot of attention in the field of beyond Complementary Metal Oxide Semiconductor (CMOS) devices. Topological Insulators (TI) have been proposed for future high electron mobility field effect transistor (FET) devices that make the physics of operation and especially the oxide-film interface extremely crucial to understand. The effects of the gate voltage on the charge trapping in TI-based FET devices are reported in this work. Sputtered BixSe1-x was chosen as the TI material. The interfacial chemistry was characterized using X-ray photoelectron spectroscopy (XPS), which shows a presence of Mg2+ and oxygen impurities. A unique hysteresis behavior was found for the gate transfer characteristics, with respect to the gate voltage. This was attributed to the charge trapping in the gate oxide and across the SiO2/BixSe1-x interface. We simulated the effects of charge fluctuations on the resistivity of the film. These devices operate under accumulation mode rather inversion mo...

Theory Of Thermally Stimulated Charges In Metal-Oxide-Semiconductor Gate Oxide

Charge Trapping At The Mos2-Sio2 Interface And Its Effects On The Characteristics Of Mos2 Metal-Oxide-Semiconductor Field Effect Transistors

Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors

Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Charge trapping analysis in sputtered BixSe1-x based accumulation-mode FETs

Modeling and Analysis for MOS Capacitance of TSV Considering Temperature Dependence

Multiphysics Simulation of Self-Heating-Induced Thermal Stress Effects on Quantum Transport in Gate-All-Around Nanosheet Field Effect Transistors

Direct tunneling hole currents through ultrathin gate oxides in metal-oxide-semiconductor devices

Field-assisted Thermally Stimulated Current of Mobile Ions in a Dielectric Layer of a Metal–oxide–semiconductor Structure

Theory of Short-Channel Surrounding-Gate Metal–Oxide–Semiconductor Field-Effect-Transistors

A Physical Charge-Based Model for Transient Response of Metal Oxide Thin-Film Transistors Considering Relaxation of Trap States

Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Effect of Single Oxide Trap on Electrostatic Properties in Tunneling Field Effect Transistor

Quantum transport in a nanosize double-gate metal-oxide-semiconductor field-effect transistor

Analytical Solution to the Density-Gradient Equation for MOS Quantum Tunneling

A MOS Quantum Tunneling Analytical Model Based on Theory of Density Gradient

Analytical Model for Subthreshold Swing and Threshold Voltage of Surrounding Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Electric field modulation of thermopower for transparent amorphous oxide thin film transistors

Quantum Mechanical Effects on the Threshold Voltage of Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

A Physical Model for Metal–Oxide Thin-Film Transistor under Gate-Bias and Illumination Stress

Temperature and Gate Bias Dependence of Carrier Transport Mechanisms in Amorphous Indium–gallium–zinc Oxide Thin Film Transistors