Optimization of Two-Dimensional Channel Thickness in Nanometer-Thick SnO 2 -Based Top-Gated Thin-Film Transistors Using Electric Field Thermopower Modulation: Implications for Flat-Panel Displays
Doudou Liang,Bin-jie Chen,Bin Feng,Yuichi Ikuhara,Hai Jun Cho,Hiromichi Ohta
DOI: https://doi.org/10.1021/acsanm.0c03069
IF: 6.14
2020-12-15
ACS Applied Nano Materials
Abstract:Transparent amorphous oxide semiconductor (TAOS) based thin-film transistors (TFTs) are essential as the backplane for developing advanced flat panel displays. Among many TAOSs, amorphous (a-) SnO<sub>2</sub> is promising active material due to its abundance compared with the state-of-the-art a-InGaZnO<sub>4</sub>. However, practical application of a-SnO<sub>2</sub>-based TFTs has not been realized because of its unstable transistor characteristics coming from the high residual carrier concentration. Precise optimization of the two-dimensional channel thickness is required to stabilize the transistor characteristics of a-SnO<sub>2</sub>-based TFTs. Here we use electric field thermopower modulation analyses to show that the two-dimensional channel thickness of a-SnO<sub>2</sub> for TFT can be optimized at ∼2 nm. After the optimization of the channel thickness, we reduced the thickness of the HfO<sub>2</sub> gate insulator film to further improve the transistor characteristics. The resultant TFT exhibited excellent transistor characteristics: on-to-off current ratio of ∼10<sup>5</sup>, normally off behavior (<i>V</i><sub>th</sub> ≈ +0.65 V), small subthreshold swing of ∼230 mV/decade, high mobility (∼10 cm<sup>2</sup> V<sup>–1</sup> s<sup>–1</sup>), and stability in changing oxygen atmospheres. The present results would bring further possibilities for the development of next-generation low-cost and low-power electronic devices.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsanm.0c03069?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsanm.0c03069</a>.Transfer curves (<i>I</i><sub>d</sub>–<i>V</i><sub>g</sub>); capacitance per unit area (<i>C</i><sub>i</sub>–<i>V</i><sub>g</sub>); sheet carrier concentration (<i>n</i><sub>s</sub>–<i>V</i><sub>g</sub>); field effect mobility (μ<sub>FE</sub>–<i>V</i><sub>g</sub>) of the 1.5-, 2-, and 3-nm-thick a-SnO<sub>2</sub> TFTs with 160-nm-thick HfO<sub>2</sub> gate insulators; sheet carrier concentration (<i>n</i><sub>s</sub>) and field effect mobility (μ<sub>FE</sub>) as a function of <i>V</i><sub>g</sub>; drain voltage dependence of the transfer characteristics <i>I</i><sub>d</sub>–<i>V</i><sub>g</sub> in air of the 2-nm-thick a-SnO<sub>2</sub> TFTs with 80-nm-thick HfO<sub>2</sub> gate insulators; threshold voltage shift (Δ<i>V</i><sub>th</sub> = <i>V</i><sub>th,BG</sub> – <i>V</i><sub>th,IN</sub>) of the 2-nm-thick top gated a-SnO<sub>2</sub> TFT with 80-nm-thick a-HfO<sub>2</sub> gate insulator under V<sub>BG</sub> = −3 (NGBS) and +6 V (PGBS) as a function of stress time; transfer curves (<i>I</i><sub>d</sub>–<i>V</i><sub>g</sub>) of several 2-nm-thick a-SnO<sub>2</sub> TFTs with 80-nm-thick a-HfO<sub>2</sub> gate insulator on the same substrate; summary of the structure, on–off current ratio, threshold gate voltage (<i>V</i><sub>th</sub>), subthreshold swing factor (<i>S.S</i>.), field effect mobility (μ<sub>FE</sub>), and fabrication method for SnO<sub>2</sub> TFTs (<a class="ext-link" href="/doi/suppl/10.1021/acsanm.0c03069/suppl_file/an0c03069_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology