Abstract:Phase change memory devices are typically reset by melt-quenching a material to radically lower its electrical conductance. The high power and concomitantly high current density required to reset phase change materials is the major issue that limits the access times of 3D phase change memory architectures. Phase change superlattices were developed to lower the reset energy by confining the phase transition to the interface between two different phase change materials. However, the high thermal conductivity of the superlattices means that heat is poorly confined within the phase change material, and most of the thermal energy is wasted to the surrounding materials. Here, we identified Ti as a useful dopant for substantially lowering the thermal conductivity of Sb2Te3-GeTe superlattices whilst also stabilising the layered structure from unwanted disordering. We demonstrate via laser heating that lowering the thermal conductivity by doping the Sb2Te3 layers with Ti halves the switching energy compared to superlattices that only use interfacial phase change transitions and strain engineering. The thermally optimized superlattice has (0 0 l) crystallographic orientation yet a thermal conductivity of just 0.25 W/m.K in the "on" (set) state. Prototype phase change memory devices that incorporate this Ti-doped superlattice switch faster and and at a substantially lower voltage than the undoped superlattice. During switching the Ti-doped Sb2Te3 layers remain stable within the superlattice and only the Ge atoms are active and undergo interfacial phase transitions. In conclusion, we show the potential of thermally optimised Sb2Te3-GeTe superlattices for a new generation of energy-efficient electrical and optical phase change memory.

Improvement of Reliability and Power Consumption for Snsb4 Phase Change Film Composited with Ga3sb7 by Superlattice-Like Method

Uncovering the physical properties, structural characteristics, and electronic application of superlattice-like Ti/Sb phase-change thin films

Electrical and Mechanical Properties Enhancement in Superlattice‐Like GaSb/Ge 2 Sb 2 Te 5 Phase Change Thin Films

Study on the crystallization of Mg35Sb65/Sn15Sb85 superlattice-like films for phase change memory application

Improvement of the thermal efficiency of Ge2Sb2Te5-based device by ultrathin carbon nanolayers

Performance optimization of Sn15Sb85 phase change material via introducing multilayer structure

Crystallization behavior and electrical characteristics of Ga–Sb thin films for phase change memory

Ga19sb81 Film for Multi-Level Phase-Change Memory

Superlattice-like films with high thermal stability and ultralow power consumption via adding graphite carbon nanolayers

The Use of Ga16Sb84 Alloy for Electronic Phase-Change Memory

Crystallization mechanism and switching behavior of In–S–Sb phase change thin films

Research on Improved Crystallization Properties and Underlying Mechanism of the Sb 2 Te 3 Phase-Change Thin Film by Inserting Sn 15 Sb 85 Layers

Designing Sb phase change materials by alloying with Ga 2 S 3 towards high thermal stability and low resistance drift by bond reconfigurations

The Effect of Sputtering Sequence Engineering in Superlattice-like Sb-Rich-Based Phase Change Materials

Nano-crystalline phase change memory with composite Si-Sb-Te film for better data retention and lower operation current

Crystallization Process and Amorphous State Stability of Si-Sb-Te Films for Phase Change Memory

GeTe/Sb7Te3 Superlatticelike Structure for Lateral Phase Change Memory

Low Thermal Conductivity Phase Change Memory Superlattices

The Coupling Effect and Phase Transition Behavior of Multiple Interfaces in GeTe/Sb Superlattice-Like Films

C-Sb Materials As Candidate for Phase-Change Memory

Phase Transformation in Mg–Sb Thin Films