Abstract:In order to balance the contradiction between on and off performances of the Schottky diodes, Si-doped beta-(AlxGa1-x)(2)O-3 (beta-AlGaO) single crystals were designed based on the bandgap and impurity engineering of beta-Ga2O3. The bandgap became larger with Al element doping. The photoluminescence properties of Si-doped beta-AlGaO were measured and the emission band was separated into three Gaussian peaks with wavelengths of 372 nm, 410 nm, and 453 nm. These peaks were derived from a self-trapped hole (STH), (V-Ga + V-O)(1-), and V-Ga(2-), respectively. This demonstrated that Al only acted on valence and conduction bands, without introducing intermediate transition levels, indicating excellent bandgap regulation. The thermal properties of Si-doped beta-AlGaO were demonstrated for the first time. Noticeably, a carrier concentration of 4.61 x 10(18) cm(-3) and a resistivity of 0.099 Omega cm were observed at room temperature in Si-doped beta-AlGaO. At low temperatures, the dominant mechanism was ionized impurity scattering, while at high temperatures, optical phonon scattering became dominant. The on-resistance of Schottky barrier diodes (SBDs) prepared using this material was only 1.57 m Omega cm(2), and the Schottky barrier was as high as 1.21 eV. At similar Schottky barrier heights, the on-resistance was 10 times lower compared to beta-Ga2O3 based SBDs. In addition, the device has a high forward current density (J(@2V)) of 521 A cm(-2) at a forward voltage of 2.0 V and an ON-/OFF-current ratio of up to 10(9). This work presents a viable approach for fabricating high-performance vertical structure devices using Si-doped beta-AlGaO materials based on the bandgap structure and impurity engineering.

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