Abstract:Low-energy ion irradiation of III-V semiconductor surfaces can lead to the formation of regular hexagonal dot patterns at the surface. We present experimental and computational results for ion irradiation of GaSb surfaces which elucidate the nature of the coupled compositional and morphological pattern-formation mechanisms. We demonstrate by in-situ grazing-incidence small-angle x-ray scattering (GISAXS) and angle-resolved Auger electron spectroscopy (ARAES) that the emergence of an altered compositional depth profile is essential to induce morphological changes at the surface. This morphological evolution of the surface follows nucleation-and-growth kinetics. Furthermore, we show from massive-scale molecular dynamics (MD) simulations that the compositional depth profile evolution leads to thermodynamic phase separation, providing a lateral compositional instability that drives pattern formation. Additionally, high-fluence simulations elucidate the irradiation-induced mechanisms of compositional depth profile formation. Prompt ion effects drive formation of single-element "protoclusters", predominantly of Sb. Structural and energetic characterization of the simulation results indicate that Sb may be more mobile than Ga, providing a diffusional pathway for long-temporal-scale compositional evolution of the irradiated surface. Our findings motivate the development of new, comprehensive models which consider the total spatial and temporal complexity of multicomponent systems evolving under ion irradiation.

Arsenic-induced Etched Nanovoids on GaSb (100)

Thermal Etching Process of Microscale Pits on the GaAs(001) Surface

Two types of etching pits in (100) ?-Ga<sub>2</sub>O<sub>3</sub> single crystals grown by casting method

Two types of etching pits in (100) β-Ga2O3 single crystals grown by casting method

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Formation of oxide crystallites on the porous GaAs surface by electrochemical deposition

Observation of Focused Ion Beam-Induced Artifacts in Transmission Electron Microscopy Samples Leading to the Epitaxial Growth of AlGaSb Quantum Dots on the GaSb Substrate

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Evolution of Nanomicro Structures on GaAs (001) Surface under High Temperature Evaporation

Enhanced Wet Etching of Patterned GaN with Ion Implantation

Origins of GaN(0 0 0 1) surface reconstructions

InAs Heteroepitaxy on Nanopillar-Patterned GaAs (111)A

Etch-Pits, of Gan Films with Different Etching Methods

Lithography-Free Nanoscale Patterned Growth of Gaas on Si(001) with Sub-100-Nm Silica Nanoparticles by Molecular Beam Epitaxy

Synthesis and Characterization of Kinked GaAs Nanowires by Sb Surfactant

Mesa Etching of Typeii InAs/GaSb Superlattice

Passivation of the GaAs(100) surface with a vapor-deposited GaS film

Nonlinear compositional and morphological evolution of ion irradiated GaSb prior to nanostructure formation

Early stages of GaAs nanowires VLS self-catalyzed growth on silica-terminated silicon substrate: A photoemission study

Chemical Bonding and Electronic Properties of SeS2-treated GaAs(100)

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates