Origin Of Room Temperature Ferromagnetism In Zno : Cu Films

t s herng,shu ping lau,s f yu,hye yon yang,x h ji,j s chen,naoki yasui,hiroshi inaba
DOI: https://doi.org/10.1063/1.2190711
IF: 2.877
2006-01-01
Journal of Applied Physics
Abstract:Copper-doped ZnO (ZnO:Cu) films were prepared on silicon substrates by filtered cathodic vacuum arc technique at room temperature using a Zn target containing 5 at. % of Cu. Room temperature ferromagnetism was observed in the ZnO:Cu films with saturation magnetization of 0.037 mu(B)/Cu atom. The origin of the ferromagnetism in ZnO:Cu was mainly due to Cu ions substituted into the ZnO lattice. X-ray diffraction, x-ray photoelectron spectroscopy, and transmission electron microscopy revealed that no ferromagnetic-related secondary phase could be detected in ZnO:Cu. (C) 2006 American Institute of Physics.
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