Formation of NiSi2/SiNX compound nanocrystal for nonvolatile memory application
Yu-Ting Chen,Ting-Chang Chang,Jin Lu,Jheng-Jie Huang,Po-Chun Yang,Shih-Ching Chen,Ann-Kuo Chu,Hui-Chun Huang,Der-Shin Gan,New-Jin Ho,Yi Shi
DOI: https://doi.org/10.1016/j.tsf.2010.04.103
IF: 2.1
2010-01-01
Thin Solid Films
Abstract:In this paper, the NiSi2/SiNX compound NCs (CNCs) structure is studied to further improve the retention. To introduce the nitride based traps, NiSi2 was also sputtered in the mixture gas of Ar (50sccm) and NH3 (10sccm) at room temperature, and the NiSi2/SiNX CNCs can be easily formed after rapid thermal annealing. In addition, standard memory devices with single and double NiSi2 nanocrystal were also prepared for comparison. By XPS analyses, the nanocrystals fabricated in the ambiance of NH3 can be confirmed to be composited of NiSi2 and SiNX compound. According to memory characteristics results, better retention characteristic of device with single-layer NiSi2/SiNX compound nanocrystal NVMs can be observed after 104s, raises from 50% to 72% in comparison with the control sample, even better than the double-layer NiSi2 nanocrystal, 58%. Indeed, the formation of NiSi2/SiNX CNCs can improve the retention characteristics remarkably due to the additional tunnel barrier and deep traps in the nitride.