Abstract:HfO2-based resistive random-access memory (RRAM) with a Ti buffer layer has been extensively studied as an emerging nonvolatile memory (eNVM) candidate because of its excellent resistive switching (RS) properties and CMOS process compatibility. However, a detailed understanding of the nature of Ti thickness-dependent RS and systematic thermal degradation research about the effect of post-metallization annealing (PMA) time on oxygen vacancy distribution and RS performance still needs to be included. Herein, the impact of Ti buffer layer thickness on the RS performance of the Al/Ti/HfO2/TiN devices is first addressed. Consequently, we have proposed a simple strategy to regulate the leakage current, forming voltage, memory window, and uniformity by varying the thickness of the Ti layer. Moreover, it is found that the device with 15 nm Ti shows the minimum cycle-to-cycle variability (CCV) and device-to-device variability (DDV), good retention (105 s at 85 °C), and superior endurance (104). In addition, thermal degradation of the Al/Ti(15 nm)/HfO2/TiN devices under different PMA times at 400 °C is carried out. It is found that the leakage current increases and the forming voltage and memory window decrease with the increase in PMA time due to the thermally activated oxidation of the Ti. However, when the PMA time increases to 30 min, the Ti can no longer capture oxygen from HfO2 due to the formation of self-limited TiOx. Therefore, the device shows superior thermal stability with a PMA time of 90 min at 400 °C and no degradation of the memory window, uniformity, endurance, or retention. This work demonstrates that the Ti/HfO2-based RRAM shows superior back-end-of-line compatibility with high thermal stability up to 400 °C for over an hour.

Improved Performances of Metal-Oxide-Nitride-Oxide-Silicon Memory with Hftion As Charge-Trapping Layer

Ti/HfO2-Based RRAM with Superior Thermal Stability Based on Self-Limited TiOx

Improved Memory Characteristics of A Novel TaN/Al2O3/TiO2/HfO2/SiO2/Si Structured Charge Trapping Memory

Enhancement of the Charge Trapping Performances with HfAlO Composite Oxide Thin Films in SONOS-type Nonvolatile Memory

Improvement of the Charge Retention of a Non-Volatile Memory by a Bandgap-Engineered Charge Trap Layer

Enhanced charge storage performance in AlTi4Ox/Al2O3 multilayer charge trapping memory devices

Influence of HfAlO Composition on Memory Effects of Metal-Oxide-semiconductor Capacitors with Al2O3/HfAlO/Al2O3 Layers and Pd Electrode

Improvement of Memory Characteristics of Charge-Trapping Memory Device by Using HfO$_2$/Al$_2$O$_3$ Laminate

Ta2o5-Tio2 Composite Charge-Trapping Dielectric for the Application of the Nonvolatile Memory

The Interface Inter-Diffusion Induced Enhancement of the Charge-Trapping Capability in Hfo2/Al2o3 Multilayered Memory Devices

Performance Improvement of Charge Trap Flash Memory by Using A Composition-Modulated High-K Trapping Layer

Remarkable Charge-Trapping Efficiency of the Memory Device with (tio2)(0.8)(al2o3)(0.1) Composite Charge-Storage Dielectric

Charge Trapping Memory Characteristics of P-Si/ultrathin Al[sub 2]o[sub 3]∕(hfo[sub 2])[sub 0.8](al[sub 2]o[sub 3])[sub 0.2]∕al[sub 2]o[sub 3]/metal Multilayer Structure

The Roles of the Dielectric Constant and the Relative Level of Conduction Band of High-K Composite with Si in Improving the Memory Performance of Charge-Trapping Memory Devices

Impact of Band-Engineering to Performance of High- K Multilayer Based Charge Trapping Memory

The Effect of Thermal Treatment Induced Inter-Diffusion at the Interfaces on the Charge Trapping Performance of Hfo2/Al2o3 Nanolaminate-Based Memory Devices

Engineering Improvement of the Core Layers of Charge Trapping Flash Memory Based on Doped HfO2 and Segmented Fabrication

Outstanding Memory Characteristics with Atomic Layer Deposited Ta2O5/Al2O3/TiO2/Al2O3/Ta2O5 Nanocomposite Structures As the Charge Trapping Layer

Effects of Composition on the Memory Characteristics of (Hfo2)x(al2o3)1-Xbased Charge Trap Nonvolatile Memory

Performance Improvement of Hf0.45Zr0.55O X Ferroelectric Field Effect Transistor Memory with Ultrathin Al-O Bonds-Modified InO X Channels

Enlargement of Memory Window of Si Channel FeFET by Inserting Al2O3 Interlayer on Ferroelectric Hf0.5Zr0.5O2