Abstract:Carbon-doped GaN (GaN:C) Schottky diodes are prepared by controlling the destruction status of the graphene interlayer (GI) on the substrate. The GI without a sputtered AlN capping layer (CL) was destroyed because of ammonia precursor etching behavior in a high-temperature epitaxy. The damaged GI, like nanographite as a solid-state carbon doping source, incorporated the epitaxial growth of the GaN layer. The secondary ion mass spectroscopy depth profile indicated that the carbon content in the GaN layer can be tuned further by optimizing the sputtering temperature of AlN CL because of the better capping ability of high crystalline quality AlN CL on GI being achieved at higher temperature. The edge-type threading dislocation density and carbon concentration of the GaN:C layer with an embedded 550 °C-grown AlN CL on a GI substrate can be significantly reduced to 2.28 × 109 cm-2 and ∼2.88 × 1018 cm-3, respectively. Thus, a Ni-based Schottky diode with an ideality factor of 1.5 and a barrier height of 0.72 eV was realized on GaN:C. The series resistance increased from 28 kΩ at 303 K to 113 kΩ at 473 K, while the positive temperature coefficient (PTC) of series resistance was ascribed to the carbon doping that induced the compensation effect and lattice scattering effect. The decrease of the donor concentration was confirmed by temperature-dependent capacitance-voltage (C-V-T) measurement. The PTC characteristic of GaN:C Schottky diodes created by dissociating the GI as a carbon doping source should allow for the future use of high-voltage Schottky diodes in parallel, especially in high-temperature environments.

Ni/Au Schottky Diodes on Alxga1-Xn (0.7 < X < 1) Grown on Aln Single Crystal Substrates

Schottky Barrier and Interface Chemistry for Ni Contacted to Al0.8Ga0.2N Grown on C‐oriented AlN Single Crystal Substrates

I - V Characteristics of Au∕Ni Schottky Diodes on GaN with SiNx Nanonetwork

Schottky I-V Characteristics of Au/Ni/GaN/SiN X Nanonework/sapphire Structures

High-current, high-voltage AlN Schottky Barrier Diodes

Performance Comparison of Pt/Au and Ni/Au Schottky Contacts on Alxga1-X N/Gan Heterostructures at High Temperatures

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Improving the GaN-on-GaN Schottky Barrier Diode by ALD-AlN Tunneling Barrier Layer and Multi-Fins Structure

Al Composition Dependent Properties Of Quaternary Alingan Schottky Diodes

Demonstration of Al0.85Ga0.15N Schottky Barrier Diode with > 3 Kv Breakdown Voltage and the Reverse Leakage Currents Formation Mechanism Analysis

Forward Current Transport Mechanisms of Ni/Au—InAlN/AlN/GaN Schottky Diodes

Solid-State Carbon-Doped GaN Schottky Diodes by Controlling Dissociation of the Graphene Interlayer with a Sputtered AlN Capping Layer

Current transport in Ni Schottky barrier on GaN epilayer grown on free standing substrates

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

3 kV AlN Schottky Barrier Diodes on Bulk AlN Substrates by MOCVD

Si/AlN p-n heterojunction interfaced with ultrathin SiO 2

Near-Ideal Schottky Contact On Quaternary Alingan Epilayer Lattice-Matched With Gan

Lateral NiO/AlN Heterojunction Rectifiers with Breakdown Voltage >11 kV

Fabrication and investigation of AlGaN-based Schottky barrier diode

Over 600 V Lateral AlN-on-AlN Schottky Barrier Diodes with Ultra-Low Ideality Factor

Progress on N‐type Doping of AlGaN Alloys on AlN Single Crystal Substrates for UV Optoelectronic Applications