Schottky Barrier and Interface Chemistry for Ni Contacted to Al0.8Ga0.2N Grown on C‐oriented AlN Single Crystal Substrates

James Tweedie,Ramon Collazo,Anthony Rice,Seiji Mita,Jinqiao Xie,Rajiv-Christer Akouala,Zlatko Sitar

DOI: https://doi.org/10.1002/pssc.201100435

2012-01-01

Abstract:Schottky diodes based on III-nitrides and their alloys have attracted interest for high-power switches, frequency multipliers and photo-detectors. In this paper we investigated Schottky barrier height (SBH) and interface chemistry for unannealed Ni on high Al mole fraction AlGaN: Si films grown by metal organic chemical vapor deposition (MOCVD) on c-oriented AlN wafers. Interface chemistry and Schottky barrier height were charac-terized by X-ray photoelectron spectroscopy (XPS) and AlGaN composition was determined by X-ray diffraction (XRD). The SBH of 1.8 eV determined by XPS was compared to values calculated from C-V and I-V measurements. XPS and I-V barriers are in good agreement. It was demonstrated that the SBH was influenced by a thin interfacial oxide layer. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim