Abstract:The Poly-Si/SiO x stack passivation structure incorporate doped polycrystalline silicon (Poly-Si) and tunneling silicon oxide (SiO x ) thin films allows for majority-carrier transport as well as block minority carriers and suppress recombination, and thus enable very high efficiency. Up to now the Poly-Si/SiO x stack passivation have been a widespread research topic for photovoltaic researchers, but most of the works are only focused on n-type doped structures and the rear side polished surface of the solar cells. In order to apply the Poly-Si/SiO x stack structure to the front textured surface and p + emitter region to obtain high-efficiency double-sided passivated contact solar cells and Si-based tandem cells in the future. In this work, passivation properties of Poly-Si/SiO x stack capped with SiN x :H layer are discussed based on different crystalline silicon surface morphologies, dopant types, doping profiles and thickness of Poly-Si layer. With proper doping process control, an excellent implied open-circuit voltage ( iVoc ) of 706 mV with a saturation current density ( J 0 ) value of 12 f A/cm 2 has been obtained for the boron-doped Poly-Si/SiO x stack capped with SiN x :H based on the textured surface, and an iVoc of 736 mV with a J 0 value of 2 f A/cm 2 has been acquired for the phosphorus-doped Poly-Si/SiO x stack capped with SiN x :H based on the acid polished surface. The results show that the polished surface and thinner Poly-Si layer are helpful for passivation. For the doped Poly-Si/SiO x stack structure, the doping source will penetrate the tunneling SiO x layer into the silicon bulk to form a certain penetration depth on the surface of the silicon substrate. In order to acquire the high iVoc (low J 0 ) value, a penetration depth of around 160 nm is needed to the phosphorus-doped Poly-Si/SiO x stack, while a penetration depth of less than 25 nm is required for boron-doped Poly-Si/SiO x stack. In addition, there is a linear relationship between the R sheet value and the reciprocal value of the Poly-Si (n + ) layer thickness.

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On the passivation mechanism of poly-silicon and thin silicon oxide on crystal silicon wafers

Aluminum Oxide Deposited by Pulsed-DC Reactive Sputtering for Crystalline Silicon Surface Passivation

Detailed Study of SiOxNy:H/Si Interface Properties for High Quality Surface Passivation of Crystalline Silicon

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Amorphous/Crystalline Silicon Interface Stability: Correlation between Infrared Spectroscopy and Electronic Passivation Properties

Real-time monitoring of surface passivation of crystalline silicon during growth of amorphous and epitaxial silicon layer

In situ Photoluminescence Study of Plasma Effects on Passivation of Crystalline Silicon Coated with Aluminum Oxide

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Investigating intrinsic silicon oxide and a lightly doped p-type layer for evolution of tail states and estimating its impact as a passivation layer in a HIT type device

The Passivation Characteristics of Poly-Si/SiOx Stack for High-Efficiency Silicon Solar Cells

Effects of PECVD preparation conditions and microstructures of boron-doped polysilicon films on surface passivation of p-type tunnel oxide passivated contacts

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Light-soaking Enhanced Passivation of Al2O3 on Crystalline Silicon Surface