Abstract:Interfacing light-sensitive semiconductors with graphene can afford high-gain phototransistors by the multiplication effect of carriers in the semiconductor layer. So far, most devices consist of one semiconductor light absorbing layer, where the lack of internal built-in field can strongly reduce the quantum efficiency and bandwidth. Here, we demonstrate a much improved graphene phototransistor performances using an epitaxial organic heterostructure composed of perylene-3,4,9,10-tetracarboxylic dianhydride (PTCDA) and pentacene as the light-absorbing layer. Compared with single light-absorbing material, the responsivity and response time can be simultaneously improved by 1 and 2 orders of magnitude over a broad band of 400-700 nm, under otherwise the same experimental conditions. As a result, the external quantum efficiency increases by over 800 times: Furthermore, the response time of the heterostructured phototransistor is highly gate-tunable down to sub-30 mu s, which is among the fastest in the sensitized graphene phototransistors interfacing with electrically passive light-absorbing semiconductors. We show that the improvement is dominated by the efficient electron hole pair dissociation due to interfacial built-in field rather than bulk absorption. The structure demonstrated here can be extended to many other organic and inorganic semiconductors, which opens new possibilities for high-performance graphene-based optoelectronics.

Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions (vol 26, 335201, 2015)

Corrigendum: Comparison of photoresponse of transistors based on graphene-quantum dot hybrids with layered and bulk heterojunctions (2015 Nanotechnology 26 335201)

Corrigendum: Graphene and PbS Quantum Dot Hybrid Vertical Phototransistor (2017 Nanotechnology 28 145201)

Experimental Demonstration of a Graphene-Based Hybrid Plasmonic Modulator: Publisher’s Note

Erratum: Hybrid Graphene Tunneling Photoconductor with Interface Engineering Towards Fast Photoresponse and High Responsivity

Improved Hybrid Polymer/pbs Quantum Dot Infrared Phototransistors Incorporating Single-Layer Graphene

Corrections to “zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors” [nov 08 3001-3011

Electrically Tunable Photoresponse In A Graphene Heterostructure Photodetector

Correction: Tailoring Quantum Transport Efficiency in Molecular Junctions Via Doping of Graphene Electrodes

Doping: A Key Enabler for Organic Transistors

Electromagnetically induced transparency via localized surface plasmon mode-assisted hybrid cavity QED (vol 32, 114205, 2023)

Correction: Ph-Responsive Fluorescent Graphene Quantum Dots for Fluorescence-Guided Cancer Surgery and Diagnosis.

Bulk- and Layer-Heterojunction Phototransistors Based on Poly [2-Methoxy-5-(2′-ethylhexyloxy-p-phenylenevinylene)] and PbS Quantum Dot Hybrids

Improving the performance of graphene phototransistors using a heterostructure as light-absorbing layer.

Self-Assembled Monolayer Organic Field-Effect Transistors (Retraction Of Vol 413, Vol 713, 2001)

Correction to “separation of Ionization Traps in NPN Transistors Irradiated by Lower Energy Electrons” [oct 13 3924-3931]

Correction: Enhancement of charge photo-generation and transport via an internal network of Sb2Se3/Cu2GeSe3 heterojunctions

Retracted: Bulk- And Layer-Heterojunction Phototransistors Based On Poly [2-Methoxy-5-(2 '-Ethylhexyloxy-P-Phenylenevinylene)] And Pbs Quantum Dot Hybrids(Retracted Article. See Vol. 110, Artn No.089901 ,2017)

Which is conducive to high responsivity in a hybrid graphene-quantum dot transistor: Bulk- or layer- heterojunction

Correction to “synergistic Effect of Ionization and Displacement Damage in NPN Transistors Caused by Protons with Various Energies” [jun 15 1375-1382]

Corrigendum: Selective photochromism in a self-coated WO3/WO3−x homojunction: enhanced solar modulation efficiency, high luminous transmittance and fast self-bleaching rate (2019 Nanotechnology 30 255703)