Abstract:We investigated the growth mechanism of SiO x N y films deposited via plasma-enhanced atomic layer deposition at low temperatures (100–300 °C) using a tetraisocyanate silane (Si(NCO) 4 ) precursor and N 2 plasma. By using tetraisocyanate silane, which does not contain hydrogen, we were able to deposit SiO x N y with notably less hydrogen, around 3–5%, compared to using silicon precursors that contain hydrogen. Additionally, the precursor ligands, including oxygen, react with surface amine groups (-NH 2 ) to form Si – N –O bonds. Therefore, by understanding the adsorption mechanism of the precursor and controlling the temperature that can affect the bond formation, we can successfully produce SiO x N y films without any oxidizing source. We utilized density functional theory to explore the adsorption mechanism during the deposition of SiO x N y films and proposed a possible adsorption pathway of the precursors and by-products on the surface. We also employed various characterization techniques, such as spectroscopic ellipsometry, X-ray photoelectron spectroscopy, X-ray reflectometry, secondary ion mass spectroscopy, and current-electric field and capacitance-voltage analyses to establish correlations between the composition and dielectric properties of the thin films. Increasing the deposition temperature results in an increased presence of stronger and more stable Si –N bonds compared to Si –O and O –N bonds. As a result, the dielectric constant of the SiO x N y film increased from 5.8 to 7.4, while the leakage current density decreased from 1.52 × 10 −8 A/cm 2 to 8.56 × 10 −10 A/cm 2 . Additionally, the counterclockwise hysteresis decreased from 0.16 V to 0.07 V as the amount of hydrogen in the SiO x N y film decreased. This can be interpreted as a reduction in hydrogen impurities, which act as charge trapping sites within the film, leading to a decrease in hysteresis with increasing temperature.

Growth of Silicon Oxynitride Films by Atmospheric Pressure Plasma Jet

Properties of "stoichiometric" Silicon Oxynitride Films

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Silicon Oxide Synthesized Using an Atmospheric Pressure Microplasma Jet from a Tetraethoxysilane and Oxygen Mixture

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

STUDY OF DEPOSITION CHARACTER OF SILICON OXYNITRIDE THIN FILMS PREPARED BY ATMOSPHERIC PRESSURE CVD

Effect of the Monomer TEOS Flow Rate on the Formation of Silicon Dioxide Films by Nonequilibrium,atmospheric Pressure Plasma Jet

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

High Quality of Ultra-Thin SiOxNyFilms Prepared in Nitrous Oxide Ambients Using Thermal Low-Pressure Oxynitridation

A High-Activity Nitrogen Plasma Flow Source for Deposition of Silicon Nitride Films

Formation of Silicon on Plasma Synthesized SiOxNy and Reaction Mechanism

Siox Nanostructures Grown under Atmospheric Pressure

Growth Of Ultrathin Sio2 On Si By Surface Irradiation With An O-2+Ar Electron Cyclotron Resonance Microwave Plasma At Low Temperatures

Deposition of Silicon Oxide Coatings by Atmospheric Pressure Plasma Jet for Oxygen Diffusion Barrier Applications

Silicon oxynitride thin films by plasma-enhanced atomic layer deposition using a hydrogen-free metal-organic silicon precursor and N 2 plasma

Study of the Growth of Thin Nitride Films under Low-Energy Nitrogen-Ion Bombardment