Abstract:In this study, a sputtering system was adopted for the preparation of Cu2ZnSnS4 (CZTS) thin films with high material quality. The system precisely controlled the elemental ratio in a copper-zinc-tin (CZT) precursor for contributing to the grain growth of CZTS crystallites, and reduced the detrimental formation of the Cu2-xS secondary phase during the high-temperature sulfurization process. The CZT precursor was prepared in a layer sequence of Zn/Sn/Cu/Zn, as the Cu-capping layer could protect the underlying Zn/Sn bilayer from volatilization during the high-temperature sulfurization. The CZT precursors were subjected to the sulfurization process at varied temperatures ranging from 480 to 560 °C for 20 min to form the CZTS thin film. In this study, the Cu/(Zn + Sn) and Zn/Sn ratios in the CZTS film were studied by energy dispersive X-ray spectroscopy measurements, and both ratios revealed elevations with an increasing sulfurization temperature, owing to the thermal volatilization of Zn and Sn. Thus, the formation of the undesirable Cu2-xS secondary phase was enhanced, and the surface roughness and density of voids on the CZTS thin films were increased. For a reduced Zn/Sn ratio with a reduced sulfurization temperature, the improved CZTS thin-film quality was demonstrated by the increased X-ray diffraction (XRD) and Raman intensity, along with the reduction of the XRD linewidth of the (112) CZTS crystal phase. A CZTS thin film with a sulfurization condition of 500 °C for 20 min showed a low Zn/Sn ratio (at 1.1), along with the features of a dense and smooth thin-film surface. Moreover, a reduced photoluminescence spectra full width at half maximum (FWHM) value of 92.7 meV was observed. In addition, for further improving the grain growth of CZTS, a pre-annealing process of a CZT precursor was conducted at a temperature of 350 °C for 30 min. An enhancement of the CZTS crystallite size with the stoichiometric formation of a CZTS phase and a reduced Cu2-XS phase was observed, indicating the superior material quality of the CZTS thin films.

Influence of Sulfurization Pressure on Cu2ZnSnS4 Thin Films and Solar Cells Prepared by Sulfurization of Metallic Precursors

Influence of sulfur partial pressure on the structural performance of Cu2ZnSnS4 solar cells

Preparation of High-Quality Cu2ZnSnS4 Thin Films for Solar Cells Via the Improvement of Sulfur Partial Pressure Using a Static Annealing Sulfurization Approach

Dependence of the properties of copper zinc tin sulfide thin films prepared by electrochemical deposition on sulfurization temperature

Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target

Influence of Na2S treatment on CZTS/Mo interface in Cu2ZnSnS4 solar cells annealed in sulfur-free atmosphere

Formation Mechanism of ZnS Impurities and Their Effect on Photoelectrochemical Properties on a Cu2ZnSnS4 Photocathode

Improving the efficiency of Cu2ZnSnS4 solar cells by promoting the homogeneous distribution of Sn element

The Influence of Sulfurization Time and H2S Concentration on the Properties of Cu2ZnSnS4 Thin Films

Effect of Sulfurization Temperature on Properties of Cu2ZnSnS4 Thin Films and Diffusion of Ti Substrate Elements

Selenization of Cu2ZnSn(S,Se)4 thin-films with varied pressures

Optimization of the Selenization Pressure Enabling Efficient Cu 2 ZnSn(S,Se) 4 Solar Cells

Improved Cu2ZnSnS4 Solar Cell Performance by Multimetallic Stacked Nanolayers

Investigation of Zn/Sn ratio for improving the material quality of CZTS thin films with the reduction of Cu2-xS secondary phase

Fabrication of Cu2SnS3 Thin Film Solar Cells Via a Sol-Gel Technique in Air

Impact of Sol–gel Precursor Treatment with Preheating Temperature on Properties of Cu2ZnSnS4 Thin Film and Its Photovoltaic Solar Cell

A Strategy to Stabilize Kesterite Czts for High-Performance Solar Cells

Study of optical and structural properties of CZTS thin films using copper capping layer and sulfurization to correct stoichiometry.

Low-cost Fabrication of Cu 2 ZnSnS 4 Thin Films for Solar Cell Absorber Layers

High-sulfur Cu2ZnSn(S,Se)4 Films by Sulfurizing As-Deposited CZTSe Film: the Evolutions of Phase, Crystallinity and S/(S+Se) Ratio

CZTSe solar cells prepared by electrodeposition of Cu/Sn/Zn stack layer followed by selenization at low Se pressure