Abstract:We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene thin-film transistors were fabricated and characterized by in situ gated four-terminal measurements. Under high vacuum conditions (base pressure of order 10E-8 mbar), the device performance is found to improve with time. The effective field-effect mobility increases by as much as a factor of two and mobilities up to 0.45 cm2/Vs were achieved. In addition, the contact resistance decreases by more than an order of magnitude and there is a significant reduction in current hysteresis. Oxygen/nitrogen exposure and annealing experiments show the improvement of the electronic parameters to be driven by a thermally promoted process and not by chemical doping. In order to extract the spectral density of trap states from the transistor characteristics, we have implemented a powerful scheme which allows for a calculation of the trap densities with high accuracy in a straightforward fashion. We show the performance improvement to be due to a reduction in the density of shallow traps <0.15 eV from the valence band edge, while the energetically deeper traps are essentially unaffected. This work contributes to an understanding of the shallow traps in organic semiconductors and identifies structural point defects within the grains of the polycrystalline thin films as a major cause.

Role of Growth Temperature on the Frequency Response Characteristics of Pentacene-Based Organic Devices

Effects of film morphology and gate dielectric surface preparation on the electrical characteristics of organic-vapor-phase-deposited pentacene thin-film transistors

Defect healing at room temperature in pentacene thin films and improved transistor performance

Atomistic insights into dynamic growth of pentacene thin films on metal surfaces functionalized with self-assembled monolayers

Improved Performance Of P-Type Pentacene Thin Film Transistor By Inserting Thin Interlayer Of N-Type Organic Semiconductor

Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Oxygen effect on the electrical characteristics of pentacene transistors

Epitaxial Growth of Ultrathin Two-Dimensional Pentacene Film with Standing-Up Molecular Geometry on Nano-Size-curved Graphene Surface

Improvement of Performance of Organic Thin-Film Transistors Through Zone Annealing

Photo-response of the conductivity in functionalized pentacene compounds

Performance of Pentacene Thin Film Transistors Fabricated with Different Deposition Speeds

Study on the Basic Capacitance–voltage Characteristics of Organic Molecular Semiconductors

Controlling the crystal formation in solution-process for organic field-effect transistors with high-performance

Pentacene Organic Ferroelectric Transistors with [P(vdf-Trfe)] Gate by Langmuir-Blodgett Process

The influences of substrate temperature on ambipolar organic heterojunction transistors

H 2 O Effect on the Stability of Organic Thin-Film Field-Effect Transistors

Ba0.6Sr0.4TiO3 Thin Films Used As Gate Dielectric in Pentacene Transistors

Gate Controlled Photocurrent Generation Mechanism in Air-Grown Organic Single Crystals for High-Speed Multiband Imaging.

Temperature gradient approach to grow large, preferentially oriented 6,13-bis(triisopropylsilylethynyl) pentacene crystals for organic thin film transistors

Effect of Impurities on Pentacene Thin Film Growth for Field-Effect Transistors

Enhancing the Electrical and Thermal Stability of Organic Thin-Film Transistors by Utilizing Fluorinated Polyimide and Silicon Dioxide Bilayer Gate Dielectric