Controllable Distribution and Reversible Migration of Charges in BiFeO 3 -Based Films on Si Substrates
Lin Lei,Lin Liu,Xiaomei Lu,Fang Mei,Hui Shen,Xueli Hu,Shuo Yan,Fengzhen Huang,Jinsong Zhu
DOI: https://doi.org/10.1021/acsami.1c14060
2021-09-01
Abstract:In ferroelectric-based integrated devices, there are usually buffer layers between ferroelectric films and semiconductor substrates. Here, Bix%FeO3−δ (x = 95, 100, and 105) (BFOx) films are prepared directly on n-Si substrates by the sol–gel method, and the variation of the hysteresis loops with Bi content and heat treatment is investigated. With the help of the dielectric measurement and the composition analysis, a PN heterojunction is believed to exist at the BFOx/Si interface. The Bi/Fe ratio determines not only the type and concentration of charged defects in the films but also the height of the interface barrier and its binding effect on mobile charges. Furthermore, the distribution and the migration of charges can be regulated reversibly by heat treatment. This work reveals the interaction between ferroelectric films and semiconductor substrates, providing an important reference for the design and application of ferroelectric/semiconductor heterostructures.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsami.1c14060.HR-TEM images of BFO95 and BFO100 on the Si substrate; HAADF-STEM images and the statistic atomic displacement of BFO95 and BFO100; I–V curves of BFO105; hysteresis loops of the samples with different top–top electrode intervals; peak fitting of the dielectric loss (tan δ) for three initial samples; permittivity (ε) and dielectric loss (tan δ) of the silicon substrate after oxygen treatment at different temperatures; O 1s XPS spectra after quenching; permittivity (ε) and dielectric loss (tan δ) of three samples after quenching; and peak fitting of the dielectric loss (tan δ) for three samples after quenching (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,nanoscience & nanotechnology