Abstract:Active electronics implemented on cheap flexible polymer substrates offer the promise of novel display technologies, wearable electronics, large area memory, and a multitude of other, as-yet-unthought-of applications that require low cost and high volume manufacturing. Thin film transistors (TFT's) fabricated on temperature-sensitive plastic substrates at low temperatures are the key to this technology. TFT's that use metal (In, Zn, Sn, Ga) oxide channels offer both high mobility (relative to amorphous Si) and the advantage of optical transparency in the visible regime. We report on the fabrication and performance of amorphous oxide transparent thin film transistors that use dc-magnetron sputter techniques to deposit IZO (In2O3 — 10 wt.% ZnO) at low oxygen potential (0 vol.% O2) for the source, drain, and gate-contact metallization and, at higher oxygen partial pressures (10 vol.% O2), for the semi-conducting channel. The devices in this study were processed at room temperature except for a single 280 °C PECVD deposition step to deposit a 230 nm-thick SiOx gate dielectric. The devices are optically transparent and operate in depletion mode with a threshold voltage of −5 V, mobility of 15 cm2/V s, an on-off ratio of >106 and, a sub-threshold slope of 1.2 V/decade. In addition, we report persistent photo-conductivity in the channel region of these devices when exposed to UV illumination.

High mobility transparent flexible nickel-doped zinc oxide thin-film transistors with small subthreshold swing

Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors Fabricated On Plastic Substrates At Low Temperature

High-Performance Flexible Tin-Zinc-Oxide Thin-Film Transistors Fabricated on Plastic Substrates

High–performance Fully–transparent Ni–doped ZnO Thin–film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

High-performance Si-doped ZnO Thin-film Transistors Fabricated on Flexible Plastic Substrate at Low Temperature

High Performance Aluminum-Doped Zno Thin Film Transistors with High-K Gate Dielectrics Fabricated at Low Temperature

P‐1.8: High Performance ZnO Thin Film Transistors on Flexible Substrate with Process Temperature No More Than 100 °C

Fully transparent al-doped ZnO thin-film transistors on flexible plastic substrates

High-Performance ZnO Thin-Film Transistors on Flexible PET Substrates with a Maximum Process Temperature of 100 °C

Synthesis of ZnO Nanowires for Thin Film Network Transistors

High-Mobility Transparent Thin-Film Transistors with an Sb-Doped Sno2 Nanocrystal Channel Fabricated at Room Temperature

Fully transparent flexible tin-doped zinc oxide thin film transistors fabricated on plastic substrate

Effects of Channel Layer Thickness on Characteristics of Flexible Nickel-Doped Zinc Oxide Thin-Film Transistors

Flexible Thin-Film Transistors on Plastic Substrate at Room Temperature.

Thin-film Transistors Based on Poly(3,3‴-Dialkyl-quarterthiophene) and Zinc Oxide Nanowires with Improved Ambient Stability

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

Effects of various oxygen partial pressures on Ti-doped ZnO thin film transistors fabricated on flexible plastic substrate

Amorphous IZO-based transparent thin film transistors

Al-Doped Zno Thin-Film Transistors on Flexible Plastic Substrate

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

High-Performance Flexible ZnO Thin-Film Transistors by Atomic Layer Deposition