Abstract:The top-down synthesis of inherently ferroelectric semiconductors and their integration with traditional material platforms have the potential to enable new low power logic devices, and to harness the bulk photoelectric effect for more efficient photovoltaic cells. InSe is a layered van der Waals compound exhibiting multiple polytypes, with semiconducting gamma-InSe revealing a non-centrosymmetric space group and showing a high carrier mobility at room temperature. Here we report the growth of InSe films on close to lattice matched semi-insulating GaAs(111)B substrates by molecular beam epitaxy (MBE). Excellent nucleation behavior resulted in the growth of smooth, single phase InSe films. The dominant polytype determined from X-ray diffraction was the targeted gamma-InSe, however Raman spectroscopy revealed spatial variations in the overall low-intensity non-centrosymmetric vibration modes. Transmission electron microscopy uncovered the presence of the three bulk polytypes beta, gamma, and epsilon-InSe coexisting in the films arranging in nanosized domains. The different polytypes can be interpreted as sequences of stacking faults and rotational twin boundaries of gamma-InSe made from individual non-centrosymmetric Se-In-In-Se layers with P-6m2 symmetry. A second, centrosymmetric Se-In-In-Se layer polymorph was identified with P-3m symmetry, which is typically not present in InSe bulk phases. First principles calculations revealed small formation energy differences between the InSe polymorphs and polytypes, yet sizeable differences in their electronic properties. Nanoscale domain sizes of varying polytypes thus resulted in sizeable electronic disorder in the grown films that dominated the electronic transport properties. Our results indicate that bottom-up thin film synthesis is a viable synthesis route towards stabilization of InSe polytypes not present in the bulk.

Nanoclusters of CaSe in Calcium-Doped Bi2Se3 Grown by Molecular-Beam Epitaxy.

Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

Molecular Beam Epitaxy and Micro-Structural Characterizations for PbSe Single Crystal Films

Interface Structure of A Topological Insulator/Superconductor Heterostructure

Topological Insulator Bi2Se3 Thin Films Grown on Double-Layer Graphene by Molecular Beam Epitaxy

Structure-Dependent Optical Properties of Self-Organized Bi2Se3 Nanostructures: from Nanocrystals to Nanoflakes.

Growth and structural characterisation of Sr-doped Bi2Se3 thin films

Evolution of Micro-Structures on PbSe Buffer Layer and Self-Organization of PbTe QDs

Growth and Structural Characterisation of Sr-doped Bi 2 Se 3 Thin Films

High Quality Ultrathin Bi2Se3 Films on CaF2 and CaF2/Si by Molecular Beam Epitaxy with a Radio Frequency Cracker Cell

Epitaxial Growth of Bi 2 Se 3 Topological Insulator Thin Films on Si ( 111 )

Atomic-Scale Magnetism of Cr-Doped Bi2Se3 Thin Film Topological Insulators.

Structure and bandgap evolution of chromium selenide epitaxially grown on Au(111): From CrSe2 to Cr2Se3

Local Structures Around 3d Metal Dopants in Topological Insulator Bi2se3 Studied by Exafs Measurements

Mixed polytype/polymorph formation and its effects on the electronic properties in InSe films grown by molecular beam epitaxy on GaAs(111)B

Synthesis and Quantum Transport Properties of Bi2se3 Topological Insulator Nanostructures

Synthesis and Field Emission Properties of Topological Insulator Bi2Se3nanoflake Arrays

Thickness and Growth-Condition Dependence of In-Situ Mobility and Carrier Density of Epitaxial Thin-Film Bi_2Se_3

Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

Quintuple-Layer Epitaxy Of Thin Films Of Topological Insulator Bi2se3

Chemical-Potential-Dependent Gap Opening At The Dirac Surface States Of Bi2se3 Induced By Aggregated Substitutional Cr Atoms