Abstract:Fermi-level pinning (FLP) effect was widely observed in thin-film transistors (TFTs) with van der Waals (vdW) layered semiconductors (organic or two-dimensional) when contact electrodes were thermally evaporated1-3. Intensive investigation was implemented for formation of FLP-free interfacial states by eliminating chemical disorder and crystal defects arising from metal deposition4-9. However, technical and principal challenges are still existing towards high-yield, wafer-scalable and low-cost integration of TFT devices. Herein, we developed a general, scaling-up strategy to fabricate large-scale, high-performance FLP-free organic TFT (OTFT) arrays by using printed vdW contacts consisting of MXene composite electrodes and 2, 7-dioctyl [1] benzothieno [3, 2-b] [1] benzothiophene (C8BTBT). Room-temperature processes allow for a physically stacked junction without any structural or chemical damages. The OTFT arrays can be printed on a large-area silicon wafer or plastic film with 100% yield, exhibit ultrahigh field-effect mobility ({\mu}_FE) over 17.0 square centimetres per volt per second (cm2 V-1s-1), high on/off ratio exceeding 108, relatively low contact resistance of 3k ohm micrometres. The underlying mechanism for the high device performance was unveiled by Kelvin Probe Force Microscopy (KPFM) combined with theoretical simulation. The results indicate that work function (W_F) of the printed electrodes can be tuned at a wide range of 4.8-5.6 eV, thus significantly lowering the charge-injection barrier at the contact interfaces with ideal FLP-free character (the interfacial factor reaches 0.99 \pm 0.02). This study paves a general strategy for achieving large-scale, high-performance thin-film electronics.

A thin film transistor, the thin film transistor and a method of driving the backplane preparation TFT drive backplane

Preparation method of thin film transistor (TFT)

Preparation of Organic Thin-Film Field Effect Transistor

A Bottom-Gate Metal–Oxide Thin-Film Transistor with Self-Aligned Source/Drain Regions

High-Yield, Scaling-Up Fabrication of Fermi-Level-Pinning-Free Organic Thin-Film Transistor Arrays with Printed Van der Waals Contacts

Organic thin film transistor with a simplified planar structure

1.1: Invited Paper: TFT Backplane for Display

Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor with Self-Aligned Definition of the Active Island

8.2: Invited Paper: Elevated‐Metal Metal‐Oxide Thin‐Film Transistor with Self‐Aligned Source/Drain Regions

P‐40: TFT‐LCD a‐Si Wet Etch Technology

(Invited) Carbon Nanotube Transistors for Flat Panel Display Application

Controlling the Surface Wettability of the Polymer Dielectric for Improved Resolution of Inkjet-Printed Electrodes and Patterned Channel Regions in Low-Voltage Solution-Processed Organic Thin Film Transistors

Facile Four-Mask Processes for Organic Thin-Film Transistor Integration Structure With Metal Interconnect

Self-aligning gate construction nano field-effect transistor and preparation thereof

Precise Patterning of Large‐Scale TFT Arrays Based on Solution‐Processed Oxide Semiconductors: A Comparative Study of Additive and Subtractive Approaches

Fabrication and Properties of InGaZnO Thin-Film Transistors Based on a Sol–Gel Method with Different Electrode Patterns

High-Performance Low-Voltage Thin-Film Transistors: Experimental and Simulation Validation of Atmospheric Pressure Plasma-Assisted Li5AlO4 Metal Oxide Solution Processing

P-28: Robust Gate Driver Design with Etching-Stop-Layer Type InGaZnO TFTs Using Stack Buffer Structure

Solution-processed zinc oxide thin films and top-gate thin film transistors

Transparent In-Plane-Gate Junctionless Oxide-Based TFTs Directly Written by Laser Scribing

A Study on the Large AMOLED Display Backplane-Less Mask Process