Abstract:The invention discloses a self-aligned gate structure nano field-effect transistor and a process for preparation, wherein one-dimensional semiconductor nano material is used as a conductive channel whose two ends are respectively provided with a source electrode and a drain electrode, a gate dielectric layer is growth through using the atomic layer deposition way to be covered between the source electrode and the drain electrode and on the side walls of the opposite surfaces of the source electrode and the drain electrode, on parts of the source electrode and the drain electrode, a gate electrode layer is growth on the gate dielectric layer through the evaporation or sputtering ways, the sum of the thicknesses of the gate dielectric layer and the gate electrode layer is smaller than the thicknesses of the source electrode and the drain electrode, and the gate electrode on the conductive channel between the source electrode and the drain electrode is electrically isolated from the source electrode and the drain electrode through the gate dielectric side walls. The self-aligned structure of the invention has simple and stable fabrication process and high freedom, greatly increases the control capability of a gate for the conductive channel as the conductive channel is basically covered by the gate electrode, and has no limitations for the materials of the gate dielectric layer and the gate electrode layer, thereby freely adjusting the threshold voltage of components, and meeting the design requirements of a scale integrated circuit.

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