Nanometer electronic device based on semiconductor nano materials and preparation method thereof

Sheng Wang,Zhiyong Zhang,Lianmao Peng,Li Ding,Xuelei Liang,Qing Chen
2010-01-01
Abstract:The invention discloses a nanometer electronic device based on semiconductor nano materials and a preparation method thereof; yttrium metal with low work function is adopted as a contact electrode material, the yttrium metal forms ohmic contact with a conduction band of one-dimensional semiconductor nanometer material directly, so as to obtain an electronic form field effect transistor with high performance and other nanometer electronic devices including a diode, biological and chemical sensors and the like, which take the semiconductor nanometer material as a base. The invention greatly reduces the processing cost of the nanometer type devices and circuits, improves the performance of the devices, and has very important significance for promoting the practical process of the nanometer electronic devices and has wide application prospect.
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