P-28: Robust Gate Driver Design with Etching-Stop-Layer Type InGaZnO TFTs Using Stack Buffer Structure

Congwei Liao,Yihua Ma,Xiaodi Liu,Xiang Liu,Shengdong Zhang

DOI: https://doi.org/10.1002/sdtp.11883

2017-01-01

SID Symposium Digest of Technical Papers

Abstract:A stack buffer structure is proposed to suppress feed‐through effects, which is caused by serious gate‐to‐drain capacitance of Etching‐Stop‐Layer (ESL) type InGaZnO (IGZO) TFTs. For low‐level‐maintaining periods, the stack buffer TFT can be modeled by reversely cascaded diodes for decreasing of noise voltage of internal nodes. Compared with conventional designs, the proposed buffer structure owns better stability and good driving ability. A robust gate driver using the proposed buffer structure is demonstrated, and only 7 TFTs and 1 capacitance are used. Thorough analysis and simulations are carried out, and the circuit performance is discussed concerning threshold voltage variation, different bootstrapping capacitance, and decreased driving pulse width. It is proven that the proposed gate driver is promising for high performance IGZO TFT display with high resolution for large dimension display.